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Número de pieza | RG2006LN | |
Descripción | Low VF / High-Speed Switching Diode | |
Fabricantes | Sanyo | |
Logotipo | ||
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No Preview Available ! Ordering number : ENA1434
RG2006LN
SANYO Semiconductors
DATA SHEET
RG2006LN
Diffused Junction Silicon Diode
Low VF • High-Speed Switching Diode
Features
• High breakdown voltage (VRRM=600V).
• High reliability.
• One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
• Fast reverse recovery time.
• Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Peak Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IOP
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤100μs, duty cycle≤50%
Sine wave, 10ms
Ratings
600
600
20
40
180
150
--55 to +150
Unit
V
V
A
A
A
°C
°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
trr1
trr2
Rth(j-c)
Conditions
IR=1mA
IF=10A
IF=20A
VR=600V
IF=10A, di / dt=100A/μs
IF=0.5A, IR=1A
Junction-Case : Smoothed DC
min
600
Ratings
typ
1.45
1.8
16
max
1.6
2.1
100
50
3.22
Unit
V
V
V
μA
ns
ns
°C / W
40809SA MS IM TC-00001901 No. A1434-1/3
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet RG2006LN.PDF ] |
Número de pieza | Descripción | Fabricantes |
RG2006LN | Low VF / High-Speed Switching Diode | Sanyo |
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