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부품번호 | BT134W-600 기능 |
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기능 | Triacs | ||
제조업체 | Kexin | ||
로고 | |||
전체 4 페이지수
SMD Type
Thyristor
Triacs
BT134W Series
Features
Repetitive peak off-state voltages :VDRM=500V 800V
RMS on-state current :IT(RMS)=1A
Non-repetitive peak on-state current :ITSM=10A
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
123
2.9
4.6
0.70+0.1
-0.1
1 T1
2 T2
3G
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
I2t for fusing
Repetitive rate of rise of on-state
current after triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction temperature
Thermal resistance
junction to solder point
Thermal resistance junction to
ambient
Symbol
Testconditons
BT134W- BT134W- BT134W-
500 600 800
Unit
VDRM
500 600 800 V
IT(RMS) full sine wave; Tmb 108
1A
full sine wave; Tj = 25 prior to surge
ITSM t = 20 ms
t = 16.7 ms
I2t t = 10 ms
10 A
11 A
0.5 A2S
ITM = 1.5 A; IG = 0.2 A;dIG/dt = 0.2 A/ s
T2+ G+
50
A/ s
dIT/dt
T2+ G-
50
A/ s
T2- G-
50
A/ s
T2- G+
10
A/ s
IGM 2 A
VGM
5V
PGM
5W
PG(AV) over any 20 ms period
0.5 W
Tstg -40 to 150
Tj 125
Rth j-sp full or half cycle
15 K/W
Rth j-a
pcb mounted; minimum footprint
pcb mounted;
156 K/W
70 K/W
www.kexin.com.cn 1
SMD Type
BT134W Series
Thyristor
IGT(Tj)
3 IGT(25 C)
2.5
2
BT136
T2+ G+
T2+ G-
T2- G-
T2- G+
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
TRIAC
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0 50 100 150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
3 IH(25C)
TRIAC
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
2 IT / A
Tj = 125 C
Tj = 25 C
1.5
Vo = 1.0 V
Rs = 0.21 Ohms
1
0.5
BT134W
typ
max
0
0 0.5 1 1.5 2
VT / V
Fig.10. Typical and maximum on-state characteristic.
100 Zth j-sp (K/W)
BT134W
10
unidirectional
1 bidirectional
P
D
tp
0.1
t
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Zth j-sp, versus
pulse width tp.
1000 dVcom/dt (V/us)
100
off-state dV/dt limit
BT134...G SERIES
BT134 SERIES
BT134...F SERIES
10
dIcom/dt = 5.1 3.9 3 2.3 1.8 1.4
A/ms
1
0 50 100
Tj / C
150
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
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4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ BT134W-600.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BT134W-600 | Triacs | Kexin |
BT134W-600 | 4Q Triac | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |