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PDF APTM100H35FTG Data sheet ( Hoja de datos )
| Número de pieza | APTM100H35FTG | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTM100H35FTG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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APTM100H35FTG
Full - Bridge
MOSFET Power Module
VDSS = 1000V
RDSon = 350mΩ typ @ Tj = 25°C
ID = 22A @ Tc = 25°C
VBUS
Q1 Q3
G1
S1 O UT1 O UT2
Q2 Q4
G3
S3
G2
S2
NT C1
0/V BU S
G4
S4
NT C2
G3
S3
VBUS
S1
G1
G4
S4
0/VBUS
S2
G2
OUT2
OUT1
NTC2
NTC1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
22
17
88
±30
420
390
25
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
1000
Coss
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM100H35FTG
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=11A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
100
limited by RDSon
100µs
10 1ms
Single pulse
TJ=150°C
TC=25°C
10ms
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=22A
TJ=25°C
VDS=200V
10 VDS=500V
8 VDS=800V
6
4
2
0
0 50 100 150 200 250
Gate Charge (nC)
www.microsemi.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM100H35FTG.PDF ] | |
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