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PDF APTM100H45STG Data sheet ( Hoja de datos )
| Número de pieza | APTM100H45STG | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTM100H45STG
Full bridge
Series & parallel diodes
MOSFET Power Module
VDSS = 1000V
RDSon = 450mΩ typ @ Tj = 25°C
ID = 18A @ Tc = 25°C
Application
VBUS • Motor control
CR 1A
CR3A
• Switched Mode Power Supplies
Q1 CR1B CR3B
Q3
• Uninterruptible Power Supplies
Features
G1
S1
O UT1 OUT2
G3
S3
• Power MOS 7® MOSFETs
CR 2A
CR 4A
- Low RDSon
- Low input and Miller capacitance
Q2 CR2B CR4B
Q4
- Low gate charge
G2
S2
NTC1
0/ VBU S
G4
S4
N T C2
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G3
S3
VB US
S1
G1
G4
S4
0/VBUS
S2
G2
OUT2
OUT1
NTC2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
18
14
72
±30
540
357
18
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
1 page  
APTM100H45STG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35 0.9
0.3
0.7
0.25
0.2 0.5
0.15 0.3
0.1
0.05
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics
60
50
VGS=15&8V
7V
40 6.5V
30
20
10
0
0
6V
5.5V
5V
5 10 15 20 25
VDS, Drain to Source Voltage (V)
30
1.4 RDS(on) vs Drain Current
Normalized to
1.3 VGS=10V @ 9A
1.2 VGS=10V
1.1 VGS=20V
1
0.9
0.8
0
10 20 30 40
ID, Drain Current (A)
50
Transfert Characteristics
80
70
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
60
50
40 TJ=125°C
30
20 TJ=25°C
10
0
0
TJ=125°C
TJ=-55°C
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
20
18
16
14
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature (°C)
www.microsemi.com
5–7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTM100H45STG.PDF ] | |
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