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Número de pieza | CNB1011 | |
Descripción | Reflective photosensor | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CNB1011 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Reflective Photosensors (Photo Reflectors)
CNB1011
Reflective photosensor
I Features
• Ultraminiature, thin type: 2.29 mm × 2.9 mm (height: 0.88 mm)
14
C0.3
Unit: mm
I Applications
• Non-contact point SW, object sensing
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage (DC)
emitting diode) Forward current (DC)
Power dissipation *1
Output (Photo Collector current
transistor) Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation *2
Temperature Operating ambient temperature
Storage temperature
VR
IF
PD
IC
VCEO
VECO
PC
Topr
Tstg
6
30
75
20
35
6
75
−25 to +85
−40 to +100
V
mA
mW
mA
V
V
mW
°C
°C
Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
2
0.577
3
0.748
1.285
1.325
2.9±0.1
0.75 max.
0.75 max.
2.29±0.1
1.45
4-0.5
1.7 1.7
5.69±0.3
1: Anode
2: Cathode
0.7 3: Emitter
1.4 4: Collector
(Note) Tolerance unless otherwise specified is ±0.2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Input Forward voltage (DC)
VF
characteristics Reverse current (DC)
IR
Output Collector cutoff current
characteristics
ICEO
Transfer Collector current *1
IC
characteristics Leakage current
ID
Collector to emitter saturation voltage VCE(sat)
Response time *2
tr
tf
IF = 4 mA
VR = 3 V
VCE = 20 V
VCE = 2 V, IF = 4 mA, d = 1 mm
VCE = 2 V, IF = 4 mA
IF = 20 mA, IC = 0.1 mA
VCC = 2 V, IC = 0.1 mA
RL = 1 000 Ω
Note)
*1: Output current (IC) measurement
method (see figure below)
Glass plate
evaporated Al
d = 1 mm
*2: Response time measurement
circuit (see figure below)
Glass plate
evaporated Al
d = 1 mm
tr: Rise time
tf: Fall time
Sig. in
IF RL IC Sig. in
VCC 50 Ω
Input and output are handled electrically
RL
This product is not designed to withstand radiation
Sig.
out VCC
Sig. out
tr
Min Typ Max Unit
1.15 1.3 V
10 µA
100 nA
40 243 µA
100 nA
0.4 V
40 µs
50
90%
10%
tf
Publication date: October 2001
SHG00056AED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet CNB1011.PDF ] |
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