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PDF FGF65A3H Data sheet ( Hoja de datos )
| Número de pieza | FGF65A3H | |
| Descripción | Trench Field Stop IGBT | |
| Fabricantes | Sanken | |
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VCE = 650 V, IC = 30 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3H, MGF65A3H, FGF65A3H
Data Sheet
Description
KGF65A3H, MGF65A3H, and FGF65A3H are 650 V
Field Stop IGBTs. Sanken original trench structure
decreases gate capacitance, and achieves high speed
switching and switching loss reduction. Thus, Field Stop
IGBTs can improve the efficiency of your circuit.
Features
● Low Saturation Voltage
● High Speed Switching
● With Integrated Fast Recovery Diode
● RoHS Compliant
● VCE ------------------------------------------------------ 650 V
● IC (TC = 100 °C) ----------------------------------------- 30 A
● Short Circuit Withstand Time ----------------------- 10 μs
● VCE(sat)-----------------------------------------------1.9 V typ.
● tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
● VF----------------------------------------------------1.8 V typ.
Applications
● Welding Converters
● PFC Circuit
Package
TO247-3L
(1) (2) (3)
TO3PF-3L
(1) (2) (3)
(1)
TO3P-3L
(4)
(1) (2) (3)
(2)(4)
(1) Gate
(2) Collector
(3) Emitter
(4) Collector
(3)
(4)
Selection Guide
Part Number
KGF65A3H
MGF65A3H
FGF65A3H
Not to scale
Package
TO247-3L
TO3P-3L
TO3PF-3L
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
1
1 page  
KGF65A3H, MGF65A3H, FGF65A3H
Rating and Characteristic Curves
1000
100
10
1
0.1
1
IGBT,
Single pulse,
TJ = 175 °C
10
100 1000
Collector-Emitter Voltage, VCE (V)
Figure 2. IGBT Reverse Bias Safe Operating Area
300
250
200
150
100
TO3P-3L,
50 TO247-3L,
TJ < 175 °C
0
25 50 75 100 125 150 175
Case Temperature, TC (°C)
Figure 4. Power Dissipation vs. TO3P-3L and
TO247-3L Case Temperature
1000
100 10 μs
100 μs
10
1
0.1
1
IGBT,
Single pulse,
TJ = 25 °C
10
100
Collector-Emitter Voltage, VCE (V)
1000
Figure 3. IGBT Safe Operating Area
100
80
60
40
20 TO3P-3L,
TO247-3L,
TJ < 175 °C
0
25 50 75 100 125 150
Case Temperature, TC (°C)
175
Figure 5. Collector Current vs. TO3P-3L and
TO247-3L Case Temperature
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
5
5 Page 
KGF65A3H, MGF65A3H, FGF65A3H
3.0
Inductive load,
2.5
VR = 400 V,
IF = 30 A
2.0
TJ = 175 °C
1.5
1.0
0.5 TJ = 25 °C
0.0
300 400 500 600 700 800 900 1000
di/dt (A/μs)
Figure 26. Diode Reverse Recovery Charge vs. di/dt
30
TJ = 175 °C
25
20
15 TJ = 25 °C
10
5 Inductive load,
VR = 400 V,
IF = 30 A
0
300 400 500 600 700 800 900 1000
di/dt (A/µs)
Figure 27. Diode Reverse Recovery Current vs. di/dt
10
1
0.1
0.01
0.001
1μ
Diode
IGBT
TO3P-3L,
TO247-3L,
TC = 25 °C,
Single pulse,
VCE < 5 V
10μ 100μ 1m 10m 100m
Pulse Width (s)
1
10
Figure 28. Transient Thermal Resistance (TO3P-3L and TO247-3L)
100
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet FGF65A3H.PDF ] | |
Hoja de datos destacado
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