(PDF) MS1452 Datasheet - RF & MICROWAVE TRANSISTORS

Número de pieza	MS1452
Descripción	RF & MICROWAVE TRANSISTORS
Fabricantes	Advanced Power Technology
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No Preview Available ! 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALLIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MINIMUM • GP = 7.5 dB DESCRIPTION: The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. MS1452 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCES VEBO PDISS IC TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case Value 48 45 4.0 43 5 +200 -65 to +150 3.0 Unit V V V W A °C ºC °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 1 page

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PDF MS1452 Data sheet ( Hoja de datos )