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GF30100MG 데이터시트 PDF




Thinki Semiconductor에서 제조한 전자 부품 GF30100MG은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 GF30100MG 기능
기능 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
제조업체 Thinki Semiconductor
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GF30100MG 데이터시트, 핀배열, 회로
GF3035MG thru GF30200MG
®
Pb Free Plating Product
GF3035MG thru GF30200MG
Pb
30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Features
TO-263
Unit : inch (mm)
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-263/D2PAK molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
LEFT PIN
RIGHT PIN
BOTTOM SIDE
HEAT SINK
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol GF30- GF30- GF30- GF30- GF30- GF30- GF30- Units
35MG 45MG 50MG 60MG 90MG 100MG 200MG
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
VRRM 35 45 50 60 90 100 200 V
VRMS 24 31 35 42 63 70 140 V
VDC 35 45 50 60 90 100 200 V
I(AV) 30 A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
IFRM
58
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC IFSM 250 A
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=30A,
IF=30A,
TTCC==12255oCoC
Maximum Instantaneous Reverse Current
@Tc=25 oC at Rated DC Blocking Voltage (Note 2)
@ Tc=125 oC
IRRM
VF
IR
1.0
0.63
0.57
0.8
15
0.5 A
0.75 0.85 0.95 V
0.65
0.75 0.92
0.8 0.8 0.8 mA
10 7.5 5 mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj
600
pF
Maximum Typical Thermal Resistance(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
RθJC
TJ
TSTG
2.5
-65 to +150
-65 to +175
oC/W
oC
oC
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2” x 3”x 0.25” Al-Plate.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/





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관련 데이터시트

부품번호상세설명 및 기능제조사
GF30100MG

30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier

Thinki Semiconductor
Thinki Semiconductor

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