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PDF ATA2536T Data sheet ( Hoja de datos )
| Número de pieza | ATA2536T | |
| Descripción | Low-voltage IR Receiver ASSP | |
| Fabricantes | ATMEL Corporation | |
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ATA2536T
Low-voltage IR Receiver ASSP
DATASHEET
Features
● Highly integrated device with no external components except PIN diode
● Supply-voltage range: 2.7V to 5.5V
● High sensitivity due to automatic sensitivity adaptation (AGC) and automatic strong
signal adaptation (ATC)
● Automatic supply voltage adaptation
● High immunity against disturbances from daylight and lamps
● Small size and innovative pad layout
● Available for carrier frequencies between 36kHz to 40kHz
● TTL and CMOS compatible
Applications
● Home entertainment applications
● Home appliances
● Remote control equipment
9226C-AUTO-05/14
1 page  
4. Electrical Characteristics, 5-V Operation
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ. Max. Unit Type*
5 Supply
5.1 Supply-voltage range
5.2 Supply current
6 Output
IIN =0
VS
4.5 5.0 5.5 V
C
IS 0.5 0.7 0.95 mA B
6.1 Internal pull-up resistor
6.2 Output voltage low
6.3 Output voltage high
Tamb = 25°C
R2 = 2.4kΩ
6.4 Output current clamping R2 = 0
7 Input
RPU
VOL
VOH
IOCL
40
VS – 0.25
8
kΩ
250 mV
VS V
mA
C
C
C
C
7.1 Input DC current
IIN = –370µA, VS = 4.5V
measure VIN
IIN_DCMAX
0
7.2 Input DC-current
VIN = 0; VS = 5V
Tamb = 25°C
IIN_DCMAX
–700
7.3
Min. detection threshold
current
Min. detection threshold
current with AC current
7.4 disturbance
IIN_AC100 = 3µA at
100Hz
Test signal:
VS = 5V
Tamb = 25°C
IIN_DC = 1µA
square pp
burst N = 16
f = f0; tPER = 10ms
BER = 50(1)
IEemin
IEemin
–1000
–2000
VB
µA C
pA B
pA C
Test signal:
VS = 5V, Tamb = 25°C
7.5
Max. detection threshold
current with VIN > 0V
IIN_DC = 1µA
square pp
burst N = 16
f = f0; tPER = 10ms
BER = 5%(1)
IEemax
–500
µA D
8 Controlled Amplifier and Filter
8.1
Maximum value of variable
gain (CGA)
VS = 5V, Tamb = 25°C
GVARMAX
50
dB D
8.2
Minimum value of variable
gain (CGA)
VS = 5V, Tamb = 25°C
GVARMIN
–6
dB D
8.3
Total internal
amplification(2)
VS = 5V, Tamb = 25°C
GMAX
72 dB D
8.4
Resulting center frequency f0 fused at VS = 3V
fusing accuracy
VS = 5V, Tamb = 25°C
f05V
f03V-FUSE –
0.5
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
C
Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4.1 ESD
2000V HBM; ESD STM5.1-2007, JESD22-A114F 2008, AEC-Q100-002-Ref-D 750V CDM;
ESD STM.5.3.1-1999
4.2 Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package.
ATA2536T [DATASHEET]
9226C–AUTO–05/14
5
5 Page 
6. Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type Number
ATA2536T1xx(1)-DDW
D(2)
2175
ATA2536T3xx(1)-DDW
1400
ATA2536T7xx(1)-DDW
3415
Type
Standard type: ≥ 10 pulses, high data rate
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data
transmission
Short burst type: ≥ 6 pulses, highest data rate
Notes: 1. xx means carrier frequency value (36, 37, 38 or 40kHz typical), frequency value 33kHz and 56kHz on request
2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V
6.1 Pad Layout and Dimensions
Figure 6-1. Pad Layout
Zapping
Versioning
750µ
GND = 297µ; 554µ
IN = 588µ; 568µ
OUT = 189µ; 334µ
VS = 66µ; 63µ
ATA2536T
Pad Layout
0,0 840µ
Note: The pad coordinates are given for the centre of the pad, values in µm from the origin (0;0)
Dimensions
Pad metallurgy
Finish
Length inclusive scribe
Width inclusive scribe
Thickness
Pads
Fusing pads
Material
Thickness
Material
Thickness
0.75mm
0.84mm
290µm ±5%
80µm diameter
60µm diameter
AlSiCu
1.0µm
PSG + Si3N4
1.0µm
ATA2536T [DATASHEET]
9226C–AUTO–05/14
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet ATA2536T.PDF ] | |
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