|
|
|
부품번호 | 160N60UFD 기능 |
|
|
기능 | Ultrafast IGBT | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
SGL160N60UFD
Ultrafast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A
• High input impedance
• CO-PAK, IGBT with FRD: trr = 75nS (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
C
G CE
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC =100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGL160N60UFD
600
± 20
160
80
300
25
280
250
100
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.5
0.83
25
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
8000
7000
6000
5000
4000
3000
2000
1000
0
1
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
Coes
Cres
10
Collector - Emitter Voltage, VCE [V]
30
Fig 7. Capacitance Characteristics
2000
1000
Common Emitter
V = 300V, V = ± 15V
CC GE
I = 80A
C
TC = 25℃
TC = 125℃
Toff
Tf
100
Tf
30
1
10
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
80
500
100
Ton
Common Emitter
Tr
10
VCC = 300V, VGE = ± 15V
R
G
=
3.9Ω
T = 25℃
C
T = 125℃
C
20 40 60 80 100 120 140 160
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
1000
Common Emitter
V = 300V, V = ± 15V
CC GE
IC = 80A
T = 25℃
C
TC = 125℃
100
Ton
Tr
20
1
10
Gate Resistance, RG [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
80
10000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 80A
TC = 25℃
TC = 125℃
Eon
Eoff
Eoff
1000
1
10
Gate Resistance, RG [Ω ]
80
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC GE
RG = 3.9Ω
TC = 25℃
TC = 125℃
Toff
Toff
100
Tf
Tf
20
20 40 60 80 100 120 140 160
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGL160N60UFD Rev. B1
4페이지 Package Dimension
TO-264
20.00 ±0.20
(8.30)
(8.30)
(1.00)
(2.00)
(R1.00)
(7.00) (7.00)
(0.50)
4.90 ±0.20
(1.50)
2.50 ±0.20
5.45TYP
[5.45 ±0.30]
(1.50)
3.00 ±0.20
1.00
+0.25
–0.10
5.45TYP
[5.45 ±0.30]
(1.50)
0.60
+0.25
–0.10
2.80 ±0.30
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
SGL160N60UFD Rev. B1
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ 160N60UFD.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
160N60UFD | Ultrafast IGBT | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |