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NGTB40N60FLWG 데이터시트 PDF




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부품번호 NGTB40N60FLWG 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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NGTB40N60FLWG 데이터시트, 핀배열, 회로
NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Solar Inverters
Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC
A
80
40
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
Tpulse Limited by TJmax
Shortcircuit withstand time
VGE = 15 V, VCE = 300 V,
TJ +150°C
Gateemitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
ICM 160 A
IF
A
80
40
IFM 160 A
tSC 5 ms
VGE
$20
V
$30
PD W
257
102
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 600 V
VCEsat = 1.85 V
C
G
E
G
C
E
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N60FL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB40N60FLWG
Package
TO247
(PbFree)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
July, 2013 Rev. 0
1
Publication Order Number:
NGTB40N60FLW/D




NGTB40N60FLWG pdf, 반도체, 판매, 대치품
NGTB40N60FLWG
TYPICAL CHARACTERISTICS
200
180 TJ = 25°C
160
VGE = 17 V to 13 V
140
120
100 11 V
80
60 10 V
40
20
0
9V
7V 8V
0 1 2 3 4 5 6 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Output Characteristics
180
160 TJ = 150°C
VGE = 17 V to 13 V
140
120
100 11 V
80
60 10 V
40 9 V
20 8 V
0 7V
0 1 2 3 4 5 6 78
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Output Characteristics
180
160
140
120
100
80
60
40
20
0
0
VGE = 17 V to 13 V
TJ = 55°C
11 V
10 V
9V
7 V to 8 V
12 3 456 7
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 3. Output Characteristics
8
160
140
120 TJ = 25°C
100 TJ = 150°C
80
60
40
20
00 4
8 12 16
VGE, GATEEMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.0 10,000
IC = 60 A
2.5 IC = 40 A
2.0 1000
1.5 IC = 20 A
IC = 5 A
1.0 100
0.5
0
75 50 25 0 25 50 75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
10
0
Cies
Coes
Cres
20 40 60
80
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
100
http://onsemi.com
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NGTB40N60FLWG 전자부품, 판매, 대치품
1
50% Duty Cycle
0.1 20%
10%
5%
2%
0.01
Single Pulse
0.001
0.000001
0.00001
10
NGTB40N60FLWG
TYPICAL CHARACTERISTICS
RqJC = 0.470
Junction R1
Ci = ti/Ri
C1
Ri (°C/W)
0.007192
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.000100
0.010280
0.010881
0.033233
R2 Rn Case 0.020448
0.000100
0.041319
0.027633
0.000100
C2 Cn 0.309198
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
ti (sec)
0.000139
0.031623
0.000973
0.002906
0.003009
0.015465
10.0000
0.076534
0.361892
316.228
0.323417
10
1 50% Duty Cycle
RqJC = 1.06
20%
0.1 10%
5%
0.01 2%
1%
0.001
0.000001
Junction R1
Ci = ti/Ri
C1
R2
C2
Rn Case Ri (°C/W) ti (sec)
0.20043 1.48E4
0.42428 0.002
0.51036 0.03
0.34767
0.1
Cn
0.11135
2.0
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.00001
0.0001
0.001
0.01 0.1
PULSE TIME (sec)
1
10 100
Figure 20. Diode Transient Thermal Impedance
1000
Figure 21. Test Circuit for Switching Characteristics
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
NGTB40N60FLWG

IGBT ( Insulated Gate Bipolar Transistor )

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