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PDF NGTB40N60L2WG Data sheet ( Hoja de datos )
| Número de pieza | NGTB40N60L2WG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB40N60L2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for Low VCEsat
• 5 ms Short−Circuit Capability
• This is a Pb−Free Device
Typical Applications
• Motor Drive Inverters
• Industrial Switching
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
TPULSE Limited by TJ Max
Pulsed collector current, Tpulse
limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
Symbol
VCES
IC
IF
IFM
ICM
tSC
Value
600
80
40
80
40
160
160
5
Unit
V
A
A
A
A
ms
VGE
$20
V
$30
V
PD W
417
208
TJ −55 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 A, 600 V
VCEsat = 2.0 V
EOFF = 0.28 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
40N60L2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N60L2WG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
Publication Order Number:
NGTB40N60L2W/D
1 page  
NGTB40N60L2WG
TYPICAL CHARACTERISTICS
6
5.5 VCE = 400 V
5
4.5
VGE = 15 V
TJ = 150°C
IC = 35 A
4
3.5
3
2.5
2
1.5
1
0.5
0
5 15 25
35 45
Eon
Eoff
55 65 75
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
2.5
IC = 40 A
VGE = 15 V
2 TJ = 150°C
Rg = 10 W
Eon
1.5
1 Eoff
0.5
10000
1000
td(off)
td(on)
100
10
5
tf VCE = 400 V
tr
VGE = 15 V
TJ = 150°C
IC = 40 A
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
1000
IC = 40 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
td(off)
100 td(on)
tf
tr
0
150
200 250 300 350 400 450 500 550
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
600
10
175 225
275 325
375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
dc operation
1 ms
100 ms
50 ms
1000
VGE = 15 V, TC = 125°C
100
1
0.1
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
10
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
www.onsemi.com
5
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| PDF Descargar | [ Datasheet NGTB40N60L2WG.PDF ] | |
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