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부품번호 | NGTB40N65IHL2WG 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 9 페이지수
NGTB40N65IHL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• TJmax = 175°C
• Soft, Fast Free Wheeling Diode
• This is a Pb−Free Device
Typical Applications
• Inductive Heating
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
650
80
40
160
80
40
160
$20
$30
300
150
−55 to +175
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 A, 650 V
VCEsat = 1.8 V
Eoff = 0.36 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
40N65IHL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N65IHL2WG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 1
1
Publication Order Number:
NGTB40N65IHL2W/D
NGTB40N65IHL2WG
TYPICAL CHARACTERISTICS
120
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0 0.5 1.0 1.5 2.0
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
VCE = 480 V
VGE = 15 V
IC = 40 A
20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.2
VCE = 400 V
1 VGE = 15 V
IC = 40 A
0.8 Rg = 10 W
0.6
Eoff
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
1000
td(off)
100 tf
VCE = 400 V
VGE = 15 V
IC = 40 A
10 Rg = 10 W
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
1.6
VCE = 400 V
1.4 VGE = 15 V
1.2
TJ = 150°C
Rg = 10 W
1.0
0.8
0.6
0.4
Eoff
0.2
0
4 14 24 34 44 54 64 74
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
84
1000
100
10
4
td(off)
tf
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
14 24 34 44
54 64 74
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
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4
4페이지 NGTB40N65IHL2WG
Figure 22. Definition of Turn On Waveform
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NGTB40N65IHL2WG | IGBT ( Insulated Gate Bipolar Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |