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NGTB40N65IHL2WG 데이터시트 PDF




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부품번호 NGTB40N65IHL2WG 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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NGTB40N65IHL2WG 데이터시트, 핀배열, 회로
NGTB40N65IHL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast copackaged free wheeling diode with a low
forward voltage.
Features
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
TJmax = 175°C
Soft, Fast Free Wheeling Diode
This is a PbFree Device
Typical Applications
Inductive Heating
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
650
80
40
160
80
40
160
$20
$30
300
150
55 to +175
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 A, 650 V
VCEsat = 1.8 V
Eoff = 0.36 mJ
C
G
E
G
C
E
TO247
CASE 340AL
MARKING DIAGRAM
40N65IHL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB40N65IHL2WG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2015
May, 2015 Rev. 1
1
Publication Order Number:
NGTB40N65IHL2W/D




NGTB40N65IHL2WG pdf, 반도체, 판매, 대치품
NGTB40N65IHL2WG
TYPICAL CHARACTERISTICS
120
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0 0.5 1.0 1.5 2.0
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
VCE = 480 V
VGE = 15 V
IC = 40 A
20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.2
VCE = 400 V
1 VGE = 15 V
IC = 40 A
0.8 Rg = 10 W
0.6
Eoff
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
1000
td(off)
100 tf
VCE = 400 V
VGE = 15 V
IC = 40 A
10 Rg = 10 W
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
1.6
VCE = 400 V
1.4 VGE = 15 V
1.2
TJ = 150°C
Rg = 10 W
1.0
0.8
0.6
0.4
Eoff
0.2
0
4 14 24 34 44 54 64 74
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
84
1000
100
10
4
td(off)
tf
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
14 24 34 44
54 64 74
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
www.onsemi.com
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NGTB40N65IHL2WG 전자부품, 판매, 대치품
NGTB40N65IHL2WG
Figure 22. Definition of Turn On Waveform
www.onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
NGTB40N65IHL2WG

IGBT ( Insulated Gate Bipolar Transistor )

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