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PDF CTNS-6603S Data sheet ( Hoja de datos )
| Número de pieza | CTNS-6603S | |
| Descripción | Fast Recovery and High Power Diode | |
| Fabricantes | Sanken | |
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VRM = 300 V, IF(AV) = 60 A, trr = 100 ns(max.)
Fast Recovery and High Power Diode
CTNS-6603S
Features
The CTNS-6603S is a high power diode of the
low-noise and low loss which realize a peak reverse
voltage of 300 V. Typical forward voltage drop of 0.95
V is realized by optimizing the relationship of trade-off
between VF and trr. It has the characteristics suit for PFC
circuit of DCM and CCM.
The low thermal resistance package achieves high
performance in terms of heat dissipation.
VRM------------------------------------------------------ 300 V
VF------------------------------------ 1.2 V max. (IF = 30 A)
IF(AV)------------------------------------------------------- 60 A
trr-------------------------------------------------- 100 ns max.
(IF = 500 mA, IRP = 500 mA, 90 % of R.P.)
Package
TO247-3L
(1) (2) (3)
AKA
Applications
For PFC Circuit (DCM,CCM)
For Large Current Secondary Side Rectifier
For DC-DC Converter, etc.
(4)
K
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA is 25 °C
Parameter
Peak Repetitive Reverse Voltage
Average Forward Current
Surge Forward Current
I2t Limiting Value
Junction Temperature
Storage Temperature
Symbol
VRM
IF(AV)
IFSM
I2t
Tj
Tstg
Rating
300
60
400
800
−40 to 150
−40 to 150
Unit Notes
V
A
A
10 ms
Half sinewave, one shot
A2s 1 ms ≤ t ≤10 ms
°C
°C
Electrical Characteristics
Unless otherwise specified, TA is 25 °C
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
VF IF = 30 A
― 0.95 1.2
V
Reverse Leakage Current
IR VR = VRM
― ― 100 µA
Reverse Leakage Current
Under High Temperature
H･IR
VR = VRM, Tj = 150 °C
― ― 10 mA
Reverse Recovery Time
IF = IRP = 500 mA,
trr Tj = 25 °C,
90 % recovery point
― ― 100 ns
Thermal Resistance*
Rth(j-c)
― ― 1.0 °C/W
* Rth(j-c) is thermal resistance between junction and case. Case temperature (TC) is measured at the under of the screw
hole of case.
CTNS-6603S-DS Rev.1.2
Oct. 30, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en/
1
1 page  
CTNS-6603S
Package Outline
TO247-3L
SYMBOL
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
φP
Q
S
MIN
4.82
2.23
1.87
1.09
1.81
2.83
0.59
20.63
17.26
15.75
13.06
4.32
19.81
3.74
3.47
5.53
NOM
5.02
2.41
2.04
1.27
2.10
3.10
0.71
21.07
17.63
15.94
13.26
4.58
5.45 BSC
20.19
4.07
3.60
5.90
6.15 BSC
MAX
5.22
2.60
2.20
1.45
2.30
3.29
0.82
21.51
18.00
16.13
13.46
4.83
20.57
4.39
3.73
6.26
NOTES:
1) Dimension is in millimeters
2) Pin treatment Pb-free. Device composition compliant with the RoHS directive.
Marking Diagram
NS6603
YMDDAB
(1) (2) (3)
Part Number
Lot Number
Y is the last digit of year (0 to 9)
M is the month (1 to 9, O ,N or D)
DD is the date (two digit of 01 to 31)
A and B are Sanken control number
CTNS-6603S-DS Rev.1.2
Oct. 30, 2014
SANKEN ELECTRIC CO.,LTD.
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CTNS-6603S.PDF ] | |
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