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CTNS-6606S 데이터시트 PDF




Sanken에서 제조한 전자 부품 CTNS-6606S은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 CTNS-6606S 기능
기능 Fast Recovery and High Power Diode
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CTNS-6606S 데이터시트, 핀배열, 회로
VRM = 600 V, IF(AV) = 60 A, trr = 100 ns(max.)
Fast Recovery and High Power Diode
CTNS-6606S
Preliminary
Features
The CTNS-6606S is a high power diode of the
low-noise and low loss which realize a peak reverse
voltage of 600 V. Typical forward voltage drop of 1.15
V is realized by optimizing the relationship of trade-off
between VF and trr. It has the characteristics suit for PFC
circuit of DCM and CRM.
The low thermal resistance package achieves high
performance in terms of heat dissipation.
VRM------------------------------------------------------ 600 V
VF------------------------------------ 1.3 V max. (IF = 30 A)
IF(AV)------------------------------------------------------- 60 A
trr-------------------------------------------------- 100 ns max.
(IF = 500 mA, IRP = 1000 mA, 75 % of R.P.)
Package
TO-247-3L
(1) (2) (3)
AKA
Applications
For PFC Circuit (DCM,CRM)
For Large Current Secondary Side Rectifier
For DC-DC Converter, etc.
(4)
K
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA is 25 °C
Parameter
Symbol
Peak Repetitive Reverse
Voltage
VRM
Average Forward Current
IF(AV)
Surge Forward Current
IFSM
I2t Limiting Value
I2t
Junction Temperature
Storage Temperature
Tj
Tstg
Rating
600
60
150
112.5
40 to 150
40 to 150
Unit Notes
V
A
A
10 ms
Half sinewave, one shot
A2s 1 ms t 10 ms
°C
°C
Electrical Characteristics
Unless otherwise specified, TA is 25 °C
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
VF IF = 30 A
1.15 1.3
V
Reverse Leakage Current
IR VR = VRM
― ― 200 µA
Reverse Leakage Current
Under High Temperature
HIR
VR = VRM, Tj = 150 °C
― ― 20 mA
Reverse Recovery Time
IF = IRP = 100 mA,
trr1 Tj = 25 °C,
90 % recovery point
IF = 500mA,IRP = 1000 mA,
trr2 Tj = 25 °C,
75 % recovery point
― ― 150 ns
― ― 100 ns
Thermal Resistance*
Rth(j-c)
― ― 1.0 °C/W
* Rth(j-c) is thermal resistance between junction and case. Case temperature (TC) is measured at the under of the screw
hole of case.
CTNS-6606S-DS Rev.0.2
Mar. 11, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en/
1




CTNS-6606S pdf, 반도체, 판매, 대치품
CTNS-6606S
Derating Curves
Preliminary
Tc IF(AV)
60
50
t/T=1/3,Sinewave
40
30
20
Tj = 150 °C
10
0
0
t
T
50
100
Case Temperature (°C)
VR = 0 (V)
t/T=1/2
DC
150
Tc IF(AV)
VR = 600 (V)
60
50
t/T=1/3
40
30
20
Tj = 150 °C
10
t
T
0
0
sinewave
50
100
t/T=1/2
DC
150
Case Temperature (°C)
CTNS-6606S-DS Rev.0.2
Mar. 11, 2014
SANKEN ELECTRIC CO.,LTD.
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CTNS-6606S 전자부품, 판매, 대치품
CTNS-6606S
Preliminary
Please pay special attention about the slack of the press mold. In case that the hole diameter of the heatsink is less
than 4 mm, it may cause the resin crack at tightening.
Soldering
When soldering the products, please be sure to minimize the working time, within the following limits:
260 ± 5 °C 10 ± 1 s (Flow, 2 times)
380 ± 10 °C 3.5 ± 0.5 s (Soldering iron, 1 time)
Soldering should be at a distance of at least 1.5 mm from the body of the products.
IMPORTANT NOTES
The contents in this document are subject to changes, for improvement and other purposes, without notice. Make
sure that this is the latest revision of the document before use.
Application and operation examples described in this document are quoted for the sole purpose of reference for the
use of the products herein and Sanken can assume no responsibility for any infringement of industrial property
rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use.
Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or
implied, as to the products, including product merchantability, and fitness for a particular purpose and special
environment, and the information, including its accuracy, usefulness, and reliability, included in this document.
Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and
defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at
their own risk, preventative measures including safety design of the equipment or systems against any possible
injury, death, fires or damages to the society due to device failure or malfunction.
Sanken products listed in this document are designed and intended for the use as components in general purpose
electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring
equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation
equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various
safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment
or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products
herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high
reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly
prohibited.
When using the products specified herein by either (i) combining other products or materials therewith or (ii)
physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that
may result from all such uses in advance and proceed therewith at your own responsibility.
Anti radioactive ray design is not considered for the products listed herein.
Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of
Sanken’s distribution network.
The contents in this document must not be transcribed or copied without Sanken’s written consent.
CTNS-6606S-DS Rev.0.2
Mar. 11, 2014
SANKEN ELECTRIC CO.,LTD.
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Fast Recovery and High Power Diode

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