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Número de pieza | CTNS-4606S | |
Descripción | Fast Recovery and High Power Diode | |
Fabricantes | Sanken | |
Logotipo | ||
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No Preview Available ! VRM = 600 V, IF(AV) = 60 A, trr = 100 ns(max.)
Fast Recovery and High Power Diode
CTNS-4606S
Features
The CTNS-4606S is a high power diode of the
low-noise and low loss which realize a peak reverse
voltage of 600 V. Typical forward voltage drop of 1.15
V is realized by optimizing the relationship of trade-off
between VF and trr. It has the characteristics suit for PFC
circuit of DCM and CRM.
The low thermal resistance package achieves high
performance in terms of heat dissipation.
VRM------------------------------------------------------- 600V
VF------------------------------------ 1.3 V max. (IF = 30 A)
IF(AV)------------------------------------------------------- 60 A
trr-------------------------------------------------- 100 ns max.
(IF = 500 mA, IRP = 1000 mA, 75 % of R.P.)
Package
TO3P-3L
(1) (2) (3)
AKA
Applications
For PFC Circuit (DCM,CRM)
For Large Current Secondary Side Rectifier
For DC-DC Converter, etc.
(4)
K
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA is 25 °C
Parameter
Symbol
Peak Repetitive Reverse
Voltage
VRM
Average Forward Current
IF(AV)
Surge Forward Current
IFSM
I2t Limiting Value
I2t
Junction Temperature
Storage Temperature
Tj
Tstg
Rating
600
60
250
312.5
−40 to 150
−40 to 150
Unit Notes
V
A
A
10 ms
Half sinewave, one shot
A2s 1 ms ≤ t ≤10 ms
°C
°C
Electrical Characteristics
Unless otherwise specified, TA is 25 °C
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
VF IF = 30 A
― 1.15 1.3
V
Reverse Leakage Current
IR VR = VRM
― ― 50 µA
Reverse Leakage Current
Under High Temperature
H・IR
VR = VRM, Tj = 150 °C
― ― 20 mA
Reverse Recovery Time
IF = IRP = 500 mA,
trr1 Tj = 25 °C,
90 % recovery point
IF = 500mA,IRP = 1000 mA,
trr2 Tj = 25 °C,
75 % recovery point
― ― 150 ns
― ― 100 ns
Thermal Resistance*
Rth(j-c)
― ― 1.0 °C/W
* Rth(j-c) is thermal resistance between junction and case. Case temperature (TC) is measured at the under of the screw
hole of case.
CTNS-4606S-DS Rev.1.1
Oct. 30, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en/
1
1 page CTNS-4606S
Package Outline
TO3P-3L
NOTES:
1) Dimension is in millimeters
2) Pin treatment Pb-free. Device composition compliant with the RoHS directive.
Marking Diagram
NS4606
YMDDAB
Part Number
Lot Number
Y is the last digit of year (0 to 9)
M is the month (1 to 9, O ,N or D)
DD is the date (two digit of 01 to 31)
A and B are Sanken control number
(1) (2) (3)
CTNS-4606S-DS Rev.1.1
Oct. 30, 2014
SANKEN ELECTRIC CO.,LTD.
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet CTNS-4606S.PDF ] |
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