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PDF SI2305DS Data sheet ( Hoja de datos )
| Número de pieza | SI2305DS | |
| Descripción | P-Channel Power MOSFE | |
| Fabricantes | TOPSKY | |
| Logotipo |  |
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P-Channel Power MOSFE
Production specification
SI2305DS
DESCRIPTION
SI2305DS is the P-Channel logic
enhancement mode power field effect
transistor is produced using high cell
density, DMOS trench technology. This
hight-density process is especially
tailored tominimize on-state resistance.
These devices are particularly suited for
low voltage application such as cellular
phone and notebook computer power
management, other battery powered
circuits,and low in-line power loss are
required. The product is in a very small
outline surface mount package.
FEATURE
20V/3.3A, RDS(ON) = 68mΩ
@VGS = 4.5V
20V/2.2A, RDS(ON) = 89mΩ
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
PIN CONFIGURATION SOT-23
3
D
GS
12
1.Gate 2.Source 3.Drain
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation 2)
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
TA = 25o
TA = 75oC
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RthJA
Limit
-20
±10
-3.3
-10
1.25
0.8
-55 to 150
100
166
Unit
V
A
W
oC
oC/W
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
3) Surface Mounted on FR4 Board.
SHENZHEN TOPSKY TECHNOLOGY CO.,LTD
www.szct.com.cn
1
1 page  
P-Channel Power MOSFE
Production specification
SI2305DS
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
SHENZHEN TOPSKY TECHNOLOGY CO.,LTD
www.szct.com.cn
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SI2305DS.PDF ] | |
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