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부품번호 | XBS306S19R-G 기능 |
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기능 | Schottky Barrier Diode | ||
제조업체 | Torex Semiconductor | ||
로고 | |||
전체 4 페이지수
XBS306S19R-G
Schottky Barrier Diode, 3A, 60V Type
ETR16034-001
■FEATURES
Forward Voltage
Forward Current
: VF=0.59V (TYP.)
: IF(AV)=3A
Repetitive Peak Reverse Voltage : VRM=60V
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL
RATINGS
UNITS
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current (Average)
Non Continuous Forward Surge Current(*1)
Junction Temperature
VRM
VR
IF(AV)
IFSM
Tj
60 V
60 V
3A
50 A
125 ℃
Storage Temperature Range
Tstg
-55~+150
℃
(*1) Non continuous high amplitude 60Hz half-sine wave.
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■PACKAGING INFORMATION
SMA-XG
Unit : mm
4.45±0.2
■MARKING RULE
①②③④⑤⑥: 306S19(Product Number)
⑦⑧
: Assembly Lot Number
5.1±0.25
1.2±0.3
■PRODUCT NAME
PRODUCT NAME
XBS306S19R-G(*1)
PACKAGE
SMA-XG
ORDER UNIT
2,000/Reel
(*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant.
■ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time
SYMBOL
VF
IR1
IR2
Ct
trr
CONDITIONS
IF=3A
VR=30V
VR=60V
VR=1V , f=1MHz
IF=IR=10mA , irr=1mA
MIN.
-
-
-
-
-
TYP.
0.59
3
9
195
55
MAX.
0.66
-
300
-
-
UNITS
V
μA
μA
pF
ns
Ta=25℃
CIRCUIT
①
②
③
③
④
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XBS306S19R-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
XBS306S19R-G | Schottky Barrier Diode | Torex Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |