FQP12N65 Datasheet PDF - Oucan Semi
| Part Number | FQP12N65 | |
| Description | 12A N-Channel MOSFET | |
| Manufacturers | Oucan Semi | |
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There is a preview and FQP12N65 download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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FQP12N65/FQPF12N65
650V, 12A N-Channel MOSFET
General Description
The FQP12N65 & FQPF12N65 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
750V@150℃
12A
< 0.72Ω
TO-220
Top View
TO-220F
D
G
S
Orderable Part Number
FQP12N65
Package Type
TO-220 Pb Free
Form
Tube
Minimum Order Quantity
1000
FQPF12N65L
FQB12N65L
TO-220F
TO-263 Green
Tube
Tape & Reel
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol FQP12N65
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
12
7.7
TC=25°C
Power Dissipation B Derate above 25oC
PD
278
2.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP12N65
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.45
FQB12N65
650
±30
12*
7.7*
48
5
375
750
30
5
50
0.4
-55 to 150
FQPF12N65
12*
7.7*
40
0.3
300
FQB12N65
65
--
2.5
FQPF12N65
65
--
3.1
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
PDM
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)12N65 (Note F)
100
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF12N65 (Note F)
100
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=3.1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PDM
0.001
Single Pulse
Ton
T
0.0001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF12N65L (Note F)
100
Page 5 of 6
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQP12N65 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FQP12N65.PDF Datasheet ] | |
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