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PDF 35N65M5 Data sheet ( Hoja de datos )
| Número de pieza | 35N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB35N65M5, STF35N65M5, STI35N65M5
STP35N65M5, STW35N65M5
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Type
STB35N65M5
STF35N65M5
STI35N65M5
STP35N65M5
STW35N65M5
VDSS @
TJMAX
710 V
710 V
710 V
710 V
710 V
RDS(on) max. ID
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
27 A
27 A(1)
27 A
27 A
27 A
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on)* area
■ Higher VDSS rating
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
■ High dv/dt capability
Applications
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
■ Switching applications
Description
'
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
3
!-V
Package
Packaging
STB35N65M5
STF35N65M5
STI35N65M5
STP35N65M5
STW35N65M5
October 2011
35N65M5
35N65M5
35N65M5
35N65M5
35N65M5
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Doc ID 15325 Rev 3
Tape and reel
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STB/F/I/P/W35N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(off)
tr
tc
tf
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
VDD = 400 V, ID = 16 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
Min. Typ. Max. Unit
60 ns
12 ns
--
28 ns
16 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
27 A
-
108 A
VSD (2) Forward on voltage
ISD = 27 A, VGS = 0
-
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 27 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 24)
-
360
7
36
ns
µC
A
trr Reverse recovery time
ISD = 27 A, di/dt = 100 A/µs
425
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
-8
IRRM Reverse recovery current
(see Figure 24)
38
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15325 Rev 3
5/22
5 Page 
STB/F/I/P/W35N65M5
Table 8. D²PAK (TO-263) mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0°
mm
Typ.
2.54
0.4
Package mechanical data
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 15325 Rev 3
11/22
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet 35N65M5.PDF ] | |
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