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35N65M5 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 35N65M5
기능 N-channel Power MOSFET
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35N65M5 데이터시트, 핀배열, 회로
STB35N65M5, STF35N65M5, STI35N65M5
STP35N65M5, STW35N65M5
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Type
STB35N65M5
STF35N65M5
STI35N65M5
STP35N65M5
STW35N65M5
VDSS @
TJMAX
710 V
710 V
710 V
710 V
710 V
RDS(on) max. ID
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
< 0.098 Ω
27 A
27 A(1)
27 A
27 A
27 A
1. Limited only by maximum temperature allowed
Worldwide best RDS(on)* area
Higher VDSS rating
Excellent switching performance
Easy to drive
100% avalanche tested
High dv/dt capability
Applications
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
Switching applications
Description
'
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
3
!-V
Package
Packaging
STB35N65M5
STF35N65M5
STI35N65M5
STP35N65M5
STW35N65M5
October 2011
35N65M5
35N65M5
35N65M5
35N65M5
35N65M5
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Doc ID 15325 Rev 3
Tape and reel
Tube
Tube
Tube
Tube
1/22
www.st.com
22




35N65M5 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STB/F/I/P/W35N65M5
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 13.5 A
Min. Typ. Max. Unit
650 V
1 µA
100 µA
100 nA
3 4 5V
0.085 0.098 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
3750
pF
- 84 - pF
5.5 pF
Co(tr)(1)
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 520 V
- 220 - pF
Co(er)(2)
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
- 75 - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
- 1.6 - Ω
Qg Total gate charge
VDD = 520 V, ID = 13.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
83 nC
- 19 - nC
35 nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/22 Doc ID 15325 Rev 3

4페이지










35N65M5 전자부품, 판매, 대치품
STB/F/I/P/W35N65M5
Electrical characteristics
Figure 8. Output characteristics
ID
(A) VGS=10V
50
Figure 9.
AM05414v1
ID
(A)
50
Transfer characteristics
VDS=10V
AM05415v1
40 40
6V
30 30
20 20
10
5V
0
0 5 10 15 20 25 30 VDS(V)
10
0
0 2 4 6 8 10 VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
VGS
(V)
12
VDS
10
8
6
VDD=520V
ID=13.5A
AM05420v1
VGS
480
400
320
240
RDS(on)
(Ω)
0.10
0.09
0.08
0.07
0.06
ID=13.5A
VGS=10V
AM05417v1
4 160 0.05
2 80 0.04
0 0 0.03
0 50 100 Qg(nC)
0 5 10 15 20 25 ID(A)
Figure 12. Capacitance variations
C
(pF)
10000
1000
100
10
1
0.1
1
10 100
Figure 13. Output capacitance stored energy
AM05418v1
Eoss
(µJ)
16
AM05419v1
Ciss
14
12
10
Coss
8
6
Crss
VDS(V)
4
2
0
0 100 200 300 400 500 600 VDS(V)
Doc ID 15325 Rev 3
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부품번호상세설명 및 기능제조사
35N65M5

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics

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