(PDF) A935 Datasheet - PNP Transistor

Número de pieza	A935
Descripción	PNP Transistor - 2SA935
Fabricantes	TRANSYS Electronics Limited
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No Preview Available ! Transys Electronics LIMITED TO-92L Plastic-Encapsulated Transistors 2SA935 TRANSISTOR (PNP) TO-92L FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -0.7 Collector-base voltage A V(BR)CBO : -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test conditions Ic=-50µA, IE=0 Ic=-2mA, IB=0 IE=-50µA, IC=0 VCB=-50V, IE=0 VEB=-4V, IC=0 VCE=-3V, IC=-100mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz MIN TYP MAX UNIT -80 V -80 V -5 V -0.5 µA -0.5 µA 82 390 -0.4 V 100 MHz 20 pF CLASSIFICATION OF hFE(1) Rank Range Marking P 82-180 Q 120-270 R 180-390 1 page

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PDF A935 Data sheet ( Hoja de datos )