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PDF SVF2N60FG Data sheet ( Hoja de datos )
| Número de pieza | SVF2N60FG | |
| Descripción | 600V N-CHANNEL MOSFET | |
| Fabricantes | SL | |
| Logotipo |  |
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SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel
enhancement mode power MOS field effect transistor which is
produced using Silan proprietary F-CellTM structure VDMOS
technology. The improved planar stripe cell and the improved
guard ring terminal have been especially tailored to minimize on-
state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF2N60M
SVF2N60MG
SVF2N60MJ
SVF2N60N
SVF2N60NF
SVF2N60F
SVF2N60FG
SVF2N60T
Package Type
TO-251D-3L
TO-251D-3L
TO-251J-3L
TO-126-3L
TO-126F-3L
TO-220F-3L
TO-220F-3L
TO-220-3L
Marking
SVF2N60M
SVF2N60MG
SVF2N60MJ
SVF2N60N
SVF2N60NF
SVF2N60F
SVF2N60FG
SVF2N60T
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Halogen free
Pb free
Pb free
Pb free
Pb free
Halogen free
Pb free
Packing
Tube
Tube
Tube
Bulk
Tube
Tube
Tube
Tube
REV:2.0
2013.02.05
Page 1 of 13
1 page  
Silan
Microelectronics SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet
TYPICAL CHARACTERISTICS(CONTINUED)
Figure 5. Capacitance Characteristics
600
500
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
400
300
200
100
Ciss
Coss
Crss
Notes:
1. VGS=0V
2. f=1MHz
0
0.1 1 10 100
Drain-Source Voltage – VDS(V)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
Notes:
1. VGS=0V
2. ID=250µA
0.8
-100 -50 0
50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
Area(SVF2N60M(G)/D)
102
Operation in This Area is
Limited by RDS(ON)
101
100µs
1ms
10ms
100
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain-Source Voltage - VDS(V)
103
Figure 6. Gate Charge Characteristics
12
VDS=120V
10 VDS=300V
VDS=480V
8
6
4
2
Note: ID=2.0A
0
01 2 3 456
Total Gate Charge – Qg(nC)
Figure 8. On-resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50 0
Notes:
1. VGS=10V
2. ID=1.0A
50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
Area(SVF2N60MJ)
102
Operation in This Area is
Limited by RDS(ON)
101
100µs
1ms
10ms
100
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain-Source Voltage - VDS(V)
103
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:2.0
2013.02.05
Page 5 of 13
5 Page 
Silan
Microelectronics SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet
PACKAGE OUTLINE (continued)
TO-126-3L(1)
7.60±0.20
2.7±0.2
1.3±0.2
UNIT: mm
φ3.1±0.1
0.00~0.30
1.27±0.10
0.76±0.10
TO-126-3L(2)
2.29TYP
2.29TYP
8.00±0.20
φ3.2±0.1
0.45~0.60
2.8±0.1
1.67±0.1
UNIT: mm
1.37
0.76±0.10
2.3±0.20
2.3±0.20
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
0.5±0.20
REV:2.0
2013.02.05
Page 11 of 13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SVF2N60FG.PDF ] | |
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