(PDF) MDD3N50 Datasheet - N-Channel MOSFET

Número de pieza	MDD3N50
Descripción	N-Channel MOSFET
Fabricantes	MagnaChip
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No Preview Available ! Preliminary – Subject to change without notice MDD3N50 N-Channel MOSFET 500V, 2.8 A, 2.5Ω General Description The MDD3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD3N50 is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 2.8A RDS(ON) ≤ 2.5Ω Applications Power Supply PFC Ballast @VGS = 10V @VGS = 10V Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAR EAS TJ, Tstg Rating 500 ±30 2.8 1.7 11.2 45 0.36 4.5 4.5 170 -55~150 Unit V V A A A W W/ oC V/ns mJ mJ oC Symbol RθJA RθJC Rating 62.5 2.75 Unit oC/W Jun 2009. Version 1.0 1 MagnaChip Semiconductor Ltd. 1 page

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PDF MDD3N50 Data sheet ( Hoja de datos )