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부품번호 | TK80E07NE 기능 |
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기능 | Silicon N Channel MOS Type Field Effect Transistor | ||
제조업체 | Toshiba | ||
로고 | |||
TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: mm
Note : This product is designed for E-Bike / UPS / Inverter in China / India market.
z Low drain−source on-resistance
: RDS(ON) = 6.9 mΩ (typ.)
z Low leakage current
: IDSS = 10 µA (max) (VDS = 70 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
DC (Note 1,4)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Peak diode recovery dv/dt (Note 5)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Thermal Characteristics
Symbol
VDSS
VDGR
VGSS
ID
ID
IDP
PD
EAS
IAR
EAR
dv/dt
Tch
Tstg
Rating
70
70
±20
80
58
240
87
16.4
40
8.7
11.5
175
−55~175
Unit
V
V
V
A
A
A
W
mJ
A
mJ
V/ns
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
-
WWeeiigghhtt:: 11..993gg((ttyypp.))
Unit: mm
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth(ch−c)
Rth(ch−a)
1.72
83.3
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L =14.9µH, RG = 25 Ω, IAR = 40A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: Tc = 100°C
Note 5: IDR 80 A,di/dt 160 A/µs, Tch Tch max.,
VDS peak VDSS
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
-
Weight: 1.9 g (typ.)
Note :Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).Thermal Characteristics
1 2013-03-07
RDS(ON) – Ta
15 Common source
VGS = 10 V
Pulse test
ID = 80 A
10 40, 20 A
5
0
−100
−50
0
50 100 150
Ambient temperature Ta (°C)
200
TK80E07NE
1000
100
IDR – VDS
Common source
Ta = 25°C
Pulse test
5
10
10 3 1 VGS = 0 V
1
0
−0.4
−0.8
−1.2
−1.6
−2
Drain-source voltage VDS (V)
10000
1000
Capacitance – VDS
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
10 Ta = 25°C
0.1
1
Crss
10 100
Drain-source voltage VDS (V)
Vth – Ta
5
Common source
VDS = 10 V
4
ID = 1 mA
Pulse test
3
2
1
0
−100 −50 0 50 100 150 200
Ambient temperature Ta (°C)
PD − Tc
100
75
50
25
0
0 50 100 150 200
Case temperature Tc (°C)
Dynamic input/output characteristics
60
VDS
12
50 10
28
40 8
14
30
VDD ≈ 56 V
6
20
VGS
4
Common source
ID = 80 A
10
Ta = 25°C
2
Pulse test
00
0 10 20 30 40 50
Total gate charge Qg (nC)
4 2013-03-07
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부품번호 | 상세설명 및 기능 | 제조사 |
TK80E07NE | Silicon N Channel MOS Type Field Effect Transistor | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |