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IRF7341GPBF 데이터시트 PDF




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IRF7341GPBF 데이터시트, 핀배열, 회로
IRF7341GPbF
Advanced Process Technology
ÿDual N-Channel MOSFET
ÿUltra Low On-Resistance
ÿ175°C Operating Temperature
ÿ Repetitive Avalanche Allowed up to Tjmax
ÿLead-Free
ÿHalogen-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of these
HEXFET Power MOSFET’s are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design
an extremely efficient and reliable device for use in a wide
variety of other applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
VDSS
55V
HEXFET® Power MOSFET
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
ID
5.1A
4.42A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Base Part Number Package Type
IRF7341GPbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7341GPbF
IRF7341GTRPbF
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient ƒ
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Max.
62.5
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 20, 2014




IRF7341GPBF pdf, 반도체, 판매, 대치품
IRF7341GPbF
1400
1200
1000
800
VGS = 0V, f = 1 MHZ
C iss
= Cgs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Cds
Ciss
600
400
200
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 5.2A
16
VVDDSS
=
=
44V
27V
VDS = 11V
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
50
100
TJ = 175° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.5 0.8 1.1
VSD ,Source-to-Drain Voltage (V)
1.4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
10 100us
1ms
1 10ms
TC
TJ
=
=
25 ° C
175 ° C
Single Pulse
0.1
0.1 1
10 100
VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
4 www.irf.com © 2014 International Rectifier
Fig 8. Maximum Safe Operating Area
Submit Datasheet Feedback February 20, 2014

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IRF7341GPBF 전자부품, 판매, 대치품
IRF7341GPbF
100
Duty Cycle = Single Pulse
10
1 0.01
0.05
0.1 0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses
0.01
0.001
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
1.0E-01
1.0E+00
Fig 15. Typical Avalanche Current Vs.Pulsewidth
1.0E+01
1.0E+02
140
120
100
80
60
40
20
0
25
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 5.1A
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 20, 2014

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IRF7341GPBF

Power MOSFET ( Transistor )

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