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PDF STF10N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STF10N60DM2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STF10N60DM2
N-channel 600 V, 0.440 Ω typ., 8 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet - production data
3
2
1
TO-220FP
Figure 1: Internal schematic diagram
Features
Order code
STF10N60DM2
VDS @
TJmax.
650 V
RDS(on)
max.
0.530 Ω
ID PTOT
8 A 25 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STF10N60DM2
Table 1: Device summary
Marking
10N60DM2
Package
TO-220FP
Packing
Tube
June 2016
DocID029381 Rev 1
This is information on a product in full production.
1/12
www.st.com
1 page  
STF10N60DM2
Symbol
ISD(1)
ISDM(2)
VSD(3)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
Source-drain current
- 8A
Source-drain current
(pulsed)
- 32 A
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 8 A
ISD = 8 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "Test
circuit for inductive load
switching and diode recovery
times")
- 1.6 V
- 90
ns
- 225
µC
-5
A
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
ISD = 8 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
- 190
- 684
- 7.2
ns
nC
A
Notes:
(1) Limited by maximum junction temperature.
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source
breakdown voltage
IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID029381 Rev 1
5/12
5 Page 
STF10N60DM2
Revision history
5 Revision history
Date
17-Jun-2016
Table 11: Document revision history
Revision
Changes
1 First release.
DocID029381 Rev 1
11/12
11 Page | ||
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