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PDF STGP6M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGP6M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STGP6M65DF2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 6 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGP6M65DF2
Table 1: Device summary
Marking
G6M65DF2
Package
TO-220
Packing
Tube
August 2016
DocID028696 Rev 3
This is information on a product in full production.
1/17
www.st.com
1 page  
STGP6M65DF2
Symbol
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
Turn-on delay
time
15 - ns
tr
Current rise
time
5.8 - ns
(di/dt)on
Turn-on
current slope
828 - A/µs
td(off)
tf
Eon(1)
Turn-off-delay
time
Current fall
time
Turn-on
switching
energy
VCE = 400 V, IC = 6 A, VGE = 15 V,
RG = 22 Ω (see Figure 29: " Test circuit
for inductive load switching" )
90 - ns
130 - ns
0.036 - mJ
Eoff(2)
Turn-off
switching
energy
0.200 - mJ
Ets
Total switching
energy
0.236 - mJ
td(on)
Turn-on delay
time
17 - ns
tr
Current rise
time
7 - ns
(di/dt)on
Turn-on
current slope
685 - A/µs
td(off)
tf
Eon(1)
Turn-off-delay
time
Current fall
time
Turn-on
switching
energy
VCE = 400 V, IC = 6 A, VGE = 15 V,
RG = 22 Ω TJ = 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
86 - ns
205 - ns
0.064 - mJ
Eoff(2)
Turn-off
switching
energy
0.290 - mJ
Ets
Total switching
energy
0.354 - mJ
tsc
Short-circuit
withstand time
VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C
VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C
6
10
- µs
- µs
Notes:
(1)Turn-on switching energy includes reverse recovery of the diode.
(2)Turn-off switching energy also includes the tail of the collector current.
DocID028696 Rev 3
5/17
5 Page 
STGP6M65DF2
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
K
δ=0.5
ZthTO2T_B
0.2
0.1
10-1
0.01
0.05
0.02
Zth=k Rthj-c
δ=tp/t
Single pulse
10 -2
10-5
10-4
10-3
tp
t
1 0 -2
10-1
tp(s)
Figure 28: Thermal impedance for diode
DocID028696 Rev 3
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STGP6M65DF2.PDF ] | |
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