|
|
PDF STGWA50M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGWA50M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STGWA50M65DF2 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
STGWA50M65DF2
Trench gate field-stop IGBT, M series 650 V, 50 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of minimum short-circuit withstand time
VCE(sat) = 1.65 V (typ.) @ IC = 50 A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGWA50M65DF2
Table 1: Device summary
Marking
Package
G50M65DF2
TO-247 long leads
Packing
Tube
June 2016
DocID028694 Rev 2
This is information on a product in full production.
1/16
www.st.com
1 page  
STGWA50M65DF2
Symbol
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
VCE = 400 V, IC = 50 A,
VGE = 15 V, RG = 6.8 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
42 - ns
21 - ns
1942 - A/µs
130 -
ns
104 -
ns
0.88 - mJ
1.57 - mJ
Ets Total switching energy
2.45 - mJ
td(on) Turn-on delay time
42 - ns
tr Current rise time
24 - ns
(di/dt)on
td(off)
tf
Eon(1)
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
VCE = 400 V, IC = 50 A,
VGE = 15 V, RG = 6.8 Ω,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching" )
1700 - A/µs
131 -
ns
184 -
ns
1.97 - mJ
Eoff(2) Turn-off switching energy
2.22 - mJ
Ets Total switching energy
VCC ≤ 400 V, VGE = 13 V,
TJstart ≤ 150 °C
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 15 V,
TJstart ≤ 150 °C
4.19
10
-
-
6-
mJ
µs
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
DocID028694 Rev 2
5/16
5 Page 
STGWA50M65DF2
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
Figure 28: Thermal impedance for diode
DocID028694 Rev 2
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STGWA50M65DF2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STGWA50M65DF2 | Trench gate field-stop IGBT | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |