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PDF STL13N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STL13N60DM2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL13N60DM2
N-channel 600 V, 0.350 Ω typ., 8 A MDmesh™ DM2
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
Features
Order code
STL13N60DM2
VDS
600 V
RDS(on) max.
0.370 Ω
ID
8A
1
2
3
4
PowerFLAT™ 5x6 HV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STL13N60DM2
Table 1: Device summary
Marking
Package
13N60DM2
PowerFLAT™ 5x6 HV
Packing
Tape and reel
December 2016
DocID029284 Rev 2
This is information on a product in full production.
1/15
www.st.com
1 page  
STL13N60DM2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 8 A
ISD = 11 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
- 8A
- 32 A
- 1.6 V
- 90
ns
- 252
nC
- 5.6
A
trr Reverse recovery time
ISD = 11 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
IRRM
Reverse recovery current
inductive load switching and
diode recovery times")
- 170
- 667
- 8.6
ns
ns
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ± 1 mA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID029284 Rev 2
5/15
5 Page 
STL13N60DM2
Dim.
A
A1
A2
b
D
E
E2
D2
e
L
K
Package mechanical data
Table 10: PowerFLAT™ 5x6 HV mechanical data
mm
Min.
Typ.
Max.
0.80 1.00
0.02 0.05
0.25
0.30
0.50
5.10 5.20
6.05 6.15
5.30
6.25
3.10 3.20
4.30 4.40
1.27
3.30
4.50
0.50 0.55
0.60
1.90 2.00
2.10
Figure 21: PowerFLAT™ 5x6 HV recommended footprint (dimensions are in mm)
DocID029284 Rev 2
8368143_Rev_3_footprint
11/15
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| PDF Descargar | [ Datasheet STL13N60DM2.PDF ] | |
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