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TSU111 데이터시트 PDF




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부품번호 TSU111 기능
기능 operational amplifier
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TSU111 데이터시트, 핀배열, 회로
TSU111
Nanopower (900 nA), high accuracy (150 µV) 5 V CMOS
operational amplifier
Datasheet - production data
DFN6 1.2x1.3
SC70-5
Features
Submicro ampere current consumption:
Icc = 900 nA typ at 25 °C
Low offset voltage: 150 µV max at 25 °C,
235 µV max over full temperature range
(-40 to 85 °C)
Low noise over 0.1 to 10 Hz bandwidth:
3.6 µVpp
Low supply voltage: 1.5 V - 5.5 V
Rail-to-rail input and output
Gain bandwidth product: 11.5 kHz typ
Low input bias current: 10 pA max at 25 °C
High tolerance to ESD: 4 kV HBM
Benefits
More than 25 years of typical equivalent
lifetime supplied by a 220 mA.h CR2032
coin type Lithium battery
High accuracy without calibration
Tolerance to power supply transient drops
Related products
See TSU101, TSU102 and TSU104 for
further power savings
See TSZ121, TSZ122 and TSZ124 for
increased accuracy
Applications
Gas sensors: CO, O2, and H2S
Alarms: PIR sensors
Signal conditioning for energy harvesting
and wearable products
Ultra long-life battery-powered applications
Battery current sensing
Active RFID tags
Description
The TSU111 operational amplifier (op amp)
offers an ultra low-power consumption of 900 nA
typical and 1.2 µA maximum when supplied by
3.3 V. Combined with a supply voltage range of
1.5 V to 5.5 V, these features allow the TSU111
to be efficiently supplied by a coin type Lithium
battery or a regulated voltage in low-power
applications.
The high accuracy of 150 µV max and 11.5 kHz
gain bandwidth make the TSU111 ideal for
sensor signal conditioning, battery supplied, and
portable applications.
November 2016
DocID029790 Rev 2
This is information on a product in full production.
1/30
www.st.com




TSU111 pdf, 반도체, 판매, 대치품
Absolute maximum ratings and operating
conditions
TSU111
2 Absolute maximum ratings and operating conditions
Symbol
VCC
Vid
Vin
Iin
Tstg
Tj
Rthja
ESD
Table 1: Absolute maximum ratings (AMR)
Parameter
Value
Supply voltage (1)
Differential input voltage (2)
Input voltage (3)
Input current (4)
6
±VCC
(VCC-) - 0.2 to (VCC+) + 0.2
10
Storage temperature
-65 to 150
Maximum junction temperature
150
Thermal resistance
junction-to-ambient (5) (6)
DFN6 1.2x1.3
SC70-5
232
205
HBM: human body model (7)
CDM: charged device model (8)
4000
1500
Latch-up immunity (9)
200
Unit
V
mA
°C
°C/W
V
mA
Notes:
(1)All voltage values, except the differential voltage are with respect to the network ground terminal.
(2)The differential voltage is the non-inverting input terminal with respect to the inverting input terminal.
(3)(VCC+) - Vin must not exceed 6 V, Vin - (VCC-) must not exceed 6 V.
(4)The input current must be limited by a resistor in-series with the inputs.
(5)Rth are typical values.
(6)Short-circuits can cause excessive heating and destructive dissipation.
(7)Related to ESDA/JEDEC JS-001 Apr. 2010
(8)Related to JEDEC JESD22-C101-E Dec. 2009
(9)Related to JEDEC JESD78C Sep. 2010
Symbol
VCC
Vicm
Toper
Table 2: Operating conditions
Parameter
Value
Supply voltage
1.5 to 5.5
Common-mode input voltage range
Operating free-air temperature range
(VCC-) - 0.1 to (VCC+) + 0.1
-40 to 85
Unit
V
°C
4/30 DocID029790 Rev 2

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TSU111 전자부품, 판매, 대치품
TSU111
Electrical characteristics
Symbol
Table 4: Electrical characteristics at (VCC+) = 3.3 V with (VCC-) = 0 V, Vicm = VCC/2,
Tamb = 25 °C, and RL = 1 MΩ connected to VCC/2 (unless otherwise specified)
Parameter
Conditions
Min. Typ. Max.
Unit
DC performance
Vio
ΔVio/ΔT
ΔVio
Iio
Iib
CMR
Avd
VOH
VOL
Iout
ICC
Input offset voltage
Input offset voltage drift
Long-term input offset voltage
drift
Input offset current (2)
Input bias current (2)
Common mode rejection ratio,
20 log (ΔVicm/ΔVio),
Vicm = 0 to 3.3 V
Large signal voltage gain,
Vout = 0.2 V to (VCC+) - 0.2 V
High-level output voltage,
(drop from VCC+)
Low-level output voltage
Output sink current,
Vout = VCC , VΙD = -200 mV
Output source current,
Vout = 0 V, VΙD = 200 mV
Supply current (per channel),
no load, Vout = VCC/2
T = 25 °C
-40 °C < T< 85 °C
-40 °C < T< 85 °C
T = 25 °C (1)
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
RL = 100 kΩ, T = 25 °C
RL = 100 kΩ, -40 °C < T< 85 °C
RL = 10 kΩ, T = 25 °C
RL = 10 kΩ, -40 °C < T< 85 °C
RL = 10 kΩ, T = 25°C
RL = 10 kΩ, -40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
150
µV
235
1.4 μV/°C
TBD
µV/√month
1 10
50
1 10
50
81 110
76
105 130
105
10 25
40
7 25
40
12 22
6
9 18
5
900 1200
1480
pA
dB
mV
mA
nA
AC performance
GBP
Fu
Φm
Gm
SR
en
ʃen
trec
Gain bandwidth product
Unity gain frequency
Phase margin
Gain margin
Slew rate (10 % to 90 %)
Equivalent input noise voltage
Low-frequency,
peak-to-peak input noise
Overload recovery time
RL = 1 MΩ, CL = 60 pF
RL = 1 MΩ, CL = 60 pF,
Vout = 0.3 V to (VCC+) - 0.3 V
f = 100 Hz
Bandwidth: f = 0.1 to 10 Hz
100 mV from rail in comparator,
RL = 100 kΩ, VΙD = ±1 V,
-40 °C < T< 85 °C
11
kHz
10
60 degrees
7 dB
2.5 V/ms
220 nV/√Hz
3.7 µVpp
630 µs
Notes:
DocID029790 Rev 2
7/30

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TSU111

operational amplifier

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