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PDF 3DD13002 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13002 | |
| Descripción | NPN Transistors | |
| Fabricantes | Kexin | |
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SMD Type
NPN Transistors
3DD13002
Transistors
■ Features
● Collector Current Capability IC=1A
● Collector Emitter Voltage VCEO=400V
● Power Switching Applications
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
600
400
6
1
0.5
150
-55 to 150
Unit
V
A
W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Fall time
Storage time
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 600 V , IE= 0
ICEO VCE= 400 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=200 mA, IB=40mA
VBE(sat) IC=200 mA, IB=40mA
hFE(1) VCE= 10V, IC= 200mA
hFE(2) VCE= 10V, IC= 0.25mA
tf IC=1A, IB1=-IB2=0.2A
ts VCC=100V
fT VCE= 10V, IC= 100mA,f=1MHz
Min Typ Max Unit
600
400 V
6
100
100 uA
100
0.5
V
1.1
10 40
5
0.5
uS
2.5
5 MHz
■ Classification of hfe(1)
Type
3DD13002 A
Range
10-15
Marking
13002A
3DD13002 B
15-20
13002B
3DD13002 C
20-25
13002C
3DD13002 D
25-30
13002D
3DD13002 E
35-35
13002E
3DD13002 F
35-40
13002F
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| PDF Descargar | [ Datasheet 3DD13002.PDF ] | |
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