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PDF AS29F010 Data sheet ( Hoja de datos )

Número de pieza AS29F010
Descripción 128K x 8 FLASH
Fabricantes Austin Semiconductor 
Logotipo Austin Semiconductor Logotipo



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No Preview Available ! AS29F010 Hoja de datos, Descripción, Manual

Austin Semiconductor, Inc.
FLASH
AS29F010
128K x 8 FLASH
UNIFORM SECTOR 5.0V FLASH MEMORY
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
• MIL-STD-883
• SMD 5962-96690
FEATURES
• Single 5.0V ±10% power supply operation
• Low power consumption:
3 12 mA typical active read current
3 30 mA typical program/erase current
3 <1 µA typical standby current
• Flexible sector architecture
3 Eight 16Kbyte sectors
3 Any combination of sectors can be erased
3 Full chip erase
• Sector protection
3 Hardware-based feature that disables/reenables program
and erase operations in any combination of sectors
3 Sector protection/unprotection can be implemented
using standard PROM programming equipment
• Embedded Algorithms
3 Embedded Erase algorithm automatically pre-programs
and erases the chip or any combination of designated
sectors
3 Embedded Program algorithm automatically programs
and verifies data at specified address
• Erase Suspend/Resume
3 Supports reading data from a sector not being erased
• Minimum 1,000,000 Program/Erase Cycles per sector
guaranteed
• Compatible with JEDEC standards
3 Pinout and software compatible with single-power-
supply FLASH
3 Superior inadvertent write protection
• Data\ Polling and Toggle Bits
3 Provides a software method of detecting program or
erase cycle completion
32-PIN Ceramic DIP (CW)
32-pin Flatpack (F)
32-pin Lead Formed Flatpack (DCG)
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
3 2 VCC
31 WE\
3 0 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
2 2 CE\
21 DQ7
20 DQ6
19 DQ5
18 DQ4
17 DQ3
OPTIONS
• Timing
50ns*
60ns
70ns
90ns
120ns
150ns
• Package
Ceramic DIP (600 mil)
Flatpack
Lead Formed Flatpack
Small Outline J-Lead
MARKING
-50
-60
-70
-90
-120
-150
CW
F
DCG
SOJ
For more products and information
please visit our web site at
www.austinsemiconductor.com
• Temperature
Industrial Temperature (-40°C to +85°C) IT
Military Temperature (-55°C to +125°C) XT
883C Processing (-55°C to +125°C) 883C
QML Processing (-55°C to +125°C) Q
NOTES: *50ns (-50) option available with IT and XT options only.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

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AS29F010 pdf
Austin Semiconductor, Inc.
FLASH
AS29F010
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in
the high impedance state, independent of the OE\ input.
The device enters the CMOS standby mode when the CE\
pin is held at VCC ± 0.5V. (Note that this is a more restricted
voltage range than VIH.) The device enters the TTL standby
more when CE\ is held at VIH. The device requires the standard
access time (tCE) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is completed.
ICC3 in the DC Characteristics table represents the standby
current specification.
Output Disable Mode
When the OE\ input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance
state.
address bits that are don’t care. When all necessary bits have
been set as required, the programming equipment may then
read the corresponding identifier code on DQ7 - DQ0
To access the autoselect codes in-system, the host system
can issue the autoselect command via the command register, as
shown in the Command Definitions table. This method does
not require VID. See “Command Definitions” for details on
using the autoselect mode.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware
sector unprotection feature re-enables both program and erase
operations in previously protected sectors.
Sector protection/unprotection must be implemented
using programming equipment. The procedure requires a high
voltage (VID) on address pin A9 and the control pins. The
device is shipped with all sectors unprotected. It is possible to
determine whether a sector is protected or unprotected. See
“Autoselect Mode” for details.
Autoselect Mode
The autoselect mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on DQ7 - DQ0. This mode is primarily
intended for programming equipment to automatically match a
device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be accessed
in-system through the command register.
When using programming equipment, the autoselect mode
requires VID on address pin A9. Address pins A6, A1, and A0
must be as shown in the Autoselect Codes (High Voltage
Method) table. In addition, when verifying sector protection,
the sector address must appear on the appropriate highest
order address bits. Refer to the corresponding Sector Address
Tables. The Command Definitions table shows the remaining
Hardware Data Protection
The command sequence requirement of unlock cycles for
programming or erasing provides data protection against
inadvertent writes (refer to the Command Definitions table). In
addition, the following hardware data protection measures
prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals during
VCC power-up and power-down transitions, or from system
noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept
any write cycles. This protects data during VCC power-up and
power-down. The command register and all internal program/
TABLE 2: SECTOR ADDRESSES TABLE
SECTOR A16 A15 A14 ADDRESS RANGE
SA0 0 0 0 00000h - 03FFFh
SA1 0 0 1 04000h - 07FFFh
SA2 0 1 0 08000h - 0BFFFh
SA3 0 1 1 0C000h - 0FFFFh
SA4 1 0 0 10000h - 13FFFh
SA5 1 0 1 14000h - 17FFFh
SA6 1 1 0 18000h - 1BFFFh
SA7 1 1 1 1C000h - 1FFFFh
NOTE: All sectors are 16 Kbytes in size.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5

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AS29F010 arduino
Austin Semiconductor, Inc.
FLASH
AS29F010
selected for erasing are protected, DQ6 toggles for
approximately 100µs, then returns to reading array data. If not
all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
If a program address falls within a protected sector, DQ6
toggles for approximately 2µs after the program command
sequence is written, then returns to reading array data.
The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 4 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the “AC
Characteristics” section for the timing diagram.
Under this condition, the device halts the operation, and when
the operation has exceeded the timing limits, DQ5 produces a
“1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array data.
FIGURE 4: TOGGLE BIT ALGORITHM
Reading Toggle Bit DQ6
Refer to Figure 4 for the following discussion. Whenever
the system initially begins reading toggle bit status, it must
read DQ7-DQ0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, a system would note and store
the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system can
read array data on DQ7-DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also
should note whether the value of DQ5 is high (see the section
on DQ5). If it is, the system should then determine again whether
the toggle bit is toggling, since the toggle bit may have stopped
toggling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the program
or erase operation. If it is still toggling, the device did not
complete the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit it toggling and DQ5 has not gone
high. The system may continue to monitor the toggle bit and
DQ5 through successive read cycles, determining the status as
described in the previous paragraph. Alternatively, it may
choose to perform other system tasks. In this case, the system
must start at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 4).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1.” This is a failure condition that
indicates the program or erase cycle was not successfully
completed.
The DQ5 failure condition may appear if the system tries to
program a “1” to a location that is previously programmed to
“0.” Only an erase operation can change a “0” back to a “1.”
NOTE:
1) Read toggle bit twice to determine whether or not it is toggling. See
text.
2) Recheck toggle bit because it may stop toggling as DQ5 changes to
“1”. See text.
AS29F010
Rev. 2.3 12/08
11
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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