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PDF AS58C1001 Data sheet ( Hoja de datos )
| Número de pieza | AS58C1001 | |
| Descripción | 128K x 8 EEPROM | |
| Fabricantes | Micross | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AS58C1001 (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
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EEPROM
AS58C1001
128K x 8 EEPROM
Radiation Tolerant
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
z SMD 5962-38267
z MIL-PRF-38535
FEATURES
z High speed: 150, 200, and 250ns
z Data Retention: 10 Years
z Low power dissipation, active current (20mW/MHz
(TYP)), standby current (100μW(MAX))
z Single +5V (+10%) power supply
z Data Polling and Ready/Busy Signals
z Erase/Write Endurance (10,000 cycles in a page mode)
z Software Data protection Algorithm
z Data Protection Circuitry during power on/off
z Hardware Data Protection with RES pin
z Automatic Programming:
Automatic Page Write: 10ms (MAX)
128 Byte page size
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)
RDY/BUSY\ 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O 0 13
I/O 1 14
I/O 2 15
Vss 16
32 Vcc
31 A15
30 RES\
29 WE\
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
22 CE\
21 I/O 7
20 I/O 6
19 I/O 5
18 I/O 4
17 I/O 3
OPTIONS
MARKINGS
z Timing
150ns access
-15
200ns access
-20
250ns access
-25
z Packages
Ceramic Flat Pack
F No. 306
Radiation Shielded Ceramic FP* SF No. 305
Ceramic SOJ
DCJ No. 508
z Operating Temperature Ranges
-Military (-55oC to +125oC)
XT
-Industrial (-40oC to +85oC)
IT
-Full Military Processing (-55oC to +125oC)
883C
*NOTE: Package lid is connected to ground (Vss). 2-sided shielding
provided via a Tungsten lid and a Tungsten slug on the underside of
package. 6.5X typ. TID boost due to shielding. (Geostationary orbit) Proven
typ. total dose 40K to 100K RADS. Contact factory for more information.
Micross can perform TID lot testing.
For more products and information
please visit our web site at
www.micross.com
GENERAL DESCRIPTION
The AS58C1001 is a 1 Megabit CMOS Electrically Erasable Pro-
grammable Read Only Memory (EEPROM) organized as 131, 072 x
8 bits. The AS58C1001 is capable or in system electrical Byte and
Page reprogrammability.
The AS58C1001 achieves high speed access, low power consump-
tion, and a high level of reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology and
CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make
its erase and write operations faster. The AS58C1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection. Hard-
ware data protection is provided with the RES pin, in addition to noise
protection on the WE signal and write inhibit during power on and
off. Software data protection is implemented using JEDEC Optional
Standard algorithm.
The AS58C1001 is designed for high reliability in the most de-
manding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles
in the Page Mode.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
1
1 page  
EEPROM
AS58C1001
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V1
Voltage on any pin Relative to Vss.......................-0.6V to +7.0V1
Storage Temperature ............................................-65°C to +150°C
Operating Temperature Range.............................-55oC to +125oC
Soldering Temperature Range...............................................260oC
Maximum Junction Temperature**....................................+150°C
Power Dissipation...................................................................1.0W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indi-
cated in the operation section of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < 125oC; Vcc = 5V +10%)
PARAMETER
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage3
Input Voltage (RES\ Pin)
Input Leakage Current4
Output Leakage Current
Output High Voltage
Output Low Voltage
CONDITION
OV < VIN < Vcc
Output(s) disabled, OV < VOUT < Vcc
IOH = -400 μA
IOL = 2.1 mA
SYMBOL
VIH
VIL
VH
ILI
ILO
VOH
VOL
MIN
2.2
-0.3
Vcc-0.5
-2
-2
2.4
MAX
VCC + 0.3V
0.8
VCC +1.0
2
2
0.4
UNITS
V
V
V
μΑ
μΑ
V
V
NOTES
9
2
4
PARAMETER
CONDITIONS
Power Supply Current:
Operating
IOUT=OmA, Vcc = 5.5V
Cycle=1μS, Duty=100%
IOUT=OmA, Vcc = 5.5V
Cycle=MIN, Duty=100%
Power Supply Current:
Standby
CE\=Vcc, Vcc = 5.5V
CE\=VIH, Vcc = 5.5V
MAX
SYM -15 -20 -25 UNITS NOTES
20 20 20
ICC3
mA
65 55 50
ICC1 350 350 350 μA
ICC2
3
3
3 mA
CAPACITANCE
PARAMETER
Input Capacitance
Output Capactiance
CONDITIONS
TA = 25oC, f = 1MHz
VIN = 0
SYMBOL
CIN
Co
MAX
6
12
UNITS
pF
pF
NOTES
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
5
5 Page 
EEPROM
AS58C1001
PAGE WRITE TIMING WAVEFORM
(WE\ CONTROLLED)
A7 - A16
A0 - A6
WE\
CE\
tAS
tCS
tAH
tWP tDL
tCH
OE\
tOES
tDH
tDS
DIN
RDY/Busy\ High-Z
tDB
tRP
tBLC
VCC
tRES
tBL
tWC
tDW
High-Z
In transition from HI to LOW or LOW to HI.
AS58C1001
Rev. 5.9 11/10
11
Micross Components reserves the right to change products or specifications without notice.
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet AS58C1001.PDF ] | |
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