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PDF AS8S512K32 Data sheet ( Hoja de datos )
| Número de pieza | AS8S512K32 | |
| Descripción | 512K x 32 SRAM | |
| Fabricantes | Micross | |
| Logotipo |  |
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AS8SS51R2AK3M2
& AS8S512K32A
512K x 32 SRAM
OPTIONS
SRAM MEMORY ARRAY
Operating Temp. Ranges
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-94611 & 5962-95624 (Military Pinout)
Full Military (-55oC to +125oC)
Military (-55oC to +125oC)
Industrial (-40oC to +85oC)
• MIL-STD-883
FEATURES
• Operation with single 5V
• Built in decoupling caps for
supply
low noise
• Vastly improved Icc Specs • Organized as 512Kx32 , byte
• High speed: 12, 15, 17, 20, 25, selectable
35, 45 & 55ns
• TTL Compatible Inputs and
• Low power CMOS
Outputs
Timing
12ns
15ns
17ns
20ns
Markings
-12
-15
-17
-20
Package
Ceramic Quad Flatpack
Pin Grid Array
GENERAL DESCRIPTION
The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS
SRAM Modules organized as 512Kx32 bits. These devices achieve
high speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
This military temperature grade product is ideally suited for
Low Power Data
Retention Mode
Pinout
Military
Commercial
military applications.
PIN ASSIGNMENT
(Top View)
Markings
Q & 883
XT
IT
Timing
25ns
35ns
45ns
55ns
Markings
-25
-35
-45
-55
Markings
Q, Q1, Q2, BQFP
P
L
Markings
(no indicator)
A*
*(available with Q package only)
I/O 0
I/O 1
I/O 2
I/O 3
68 Lead CQFP
(Q, Q1, Q2)
Military SMD
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
Pinout Option
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60 I/O 16
59 I/O 17
58 I/O 18
57 I/O 19
56 I/O 20
55 I/O 21
54 I/O 22
53 I/O 23
52 GND
51 I/O 24
50 I/O 25
49 I/O 26
48 I/O 27
47 I/O 28
46 I/O 29
45 I/O 30
44 I/O 31
I/O17
I/O18
I/O19
Vss
I/O20
I/O21
I/O22
I/O23
Vcc
I/O24
I/O25
I/O26
I/O27
Vss
I/O28
I/O29
I/O30
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60 I/O 14
59 I/O 13
58 I/O 12
57 Vss
56
55
I/O 11
I/O 10
68 Lead CQFP
54
53
52
I/O 9
I/O 8
Vcc
Commercial
Pinout Option
51
50
I/O 7
I/O 6
(Q with
49
48
I/O 5
I/O 4
Pinout A)
47 Vss
46 I/O 3
45 I/O 2
44 I/O 1
68 Lead
CQFP
(BQFP)
Military SMD
Pinout Option
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
60 I/O 16
59 I/O 17
58 I/O 18
57 I/O 19
56 I/O 20
55 I/O 21
54 I/O 22
53 I/O 23
52 GND
51 I/O 24
50 I/O 25
49 I/O 26
48 I/O 27
47 I/O 28
46 I/O 29
45 I/O 30
44 I/O 31
66 Lead
PGA (P)
Military SMD
Pinout
Micross Components reserves the right to change products or specifications without notice.
1
1 page  
AS8SS51R2AK3M2
& AS8S512K32A
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip select access time
Output hold from address change
Chip select to output in Low-Z
Chip select to output in High-Z
Output enable access time
Output enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip select to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-z
Write enable to output in High-Z
SYMBOL
-12
MIN MAX
-15
MIN MAX
-17
MIN MAX
-20
MIN MAX
-25
MIN MAX
-35
MIN MAX
-45
MIN MAX
-55
MIN MAX
UNITS
NOTES
tRC
tAA
tACS
tOH
tLZCS
tHZCS
tAOE
tLZOE
tHZOE
12 15 17 20 25 35 45 55
12 15 17 20 25 35 45 55
12 15 17 20 25 35 45 55
22222222
22222222
7 8 9 10 12 15 20 20
7 8 9 10 12 15 20 20
00000000
7 9 12 12 12 15 20 20
ns
ns
ns
ns
ns
ns
ns
ns
ns
4,6,7
4,6,7
4,6
4,6
tWC
12
15
17
20
25
35
45
55
ns
tCW
10
12
15
15
17
20
25
25
ns
tAW 10 12 15 15 17 20 25 25
ns
tAS 2 2 2 2 2 2 2 2
ns
tAH 1 1 1 1 1 1 1 1
ns
tWP1
10
12
15
15
17
20
25
25
ns
tWP2
10
12
15
15
17
20
25
25
ns
tDS 8
10 12 10 12 15 20 20
ns
tDH 0 0 0 0 0 0 0 0
ns
tLZWE
2
2
2
2
2
2
2
2
ns 4,6,7
tHZWE
7
8
9
11
13
15
15
15 ns
4,6,7
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
5
5 Page 
AS8SSS5R1R2AAKM3M2
& AASS88SS551122KK3322A
AuMsEtiCn HSeAmNiIcCoAndLuDctEoFr,INInIcT.IONS&*AS8S512K32A
MECHANICAL DEFINITIONS*
Micross Case #904 (Package Designator P )
ASI CSaMsDe 5#96024-9(P4a6c1k1a,gCeasDeesOiguntlainteorTP )
SMD 5962-94611, Case Outline T
Pin 56
Pin 56
4xD
D1
4 x DD2
D1
D2
Pin 1
(identified by
P0in.0 160 square pad)
(identified by
0.060 square pad)
A
A A1
A1
φb1
φb1
E1
E1
Pin 66
Pin 66
e
e
SYMBOL
A
A1
φb
φb1
D
D1/E1
D2
e
L
Pin 11
Pin 11
e
e
φb
φb
L
L
SMD SPECIFICATIONS
MIN MAX
0.144
0.181
0.025
0.035
0.016
0.020
0.045
0.055
1.065
1.085
1.000 TYP
0.600 TYP
0.100 TYP
0.145
0.155
*All measurements are in inches.
*ARASelv8l.Sm65.19e2a0Ks8u3/2r1e3&mAeSn8tsS5a1r2eKi3n2Ainches.
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
11
11
Micross Components reserves the right to change products or specifications without notice.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet AS8S512K32.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AS8S512K32 | 512K x 32 SRAM SRAM MEMORY ARRAY |  Austin Semiconductor |
| AS8S512K32 | 512K x 32 SRAM | Micross |
| AS8S512K32A | 512K x 32 SRAM | Micross |
| AS8S512K32A | 512K x 32 SRAM SRAM MEMORY ARRAY | Austin Semiconductor |
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