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AS8S512K32A 데이터시트 PDF




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부품번호 AS8S512K32A 기능
기능 512K x 32 SRAM
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AS8S512K32A 데이터시트, 핀배열, 회로
AS8SS51R2AK3M2
& AS8S512K32A
512K x 32 SRAM
OPTIONS
SRAM MEMORY ARRAY
Operating Temp. Ranges
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-94611 & 5962-95624 (Military Pinout)
Full Military (-55oC to +125oC)
Military (-55oC to +125oC)
Industrial (-40oC to +85oC)
• MIL-STD-883
FEATURES
Operation with single 5V
Built in decoupling caps for
supply
low noise
• Vastly improved Icc Specs • Organized as 512Kx32 , byte
High speed: 12, 15, 17, 20, 25, selectable
35, 45 & 55ns
• TTL Compatible Inputs and
• Low power CMOS
Outputs
Timing
12ns
15ns
17ns
20ns
Markings
-12
-15
-17
-20
Package
Ceramic Quad Flatpack
Pin Grid Array
GENERAL DESCRIPTION
The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS
SRAM Modules organized as 512Kx32 bits. These devices achieve
high speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
This military temperature grade product is ideally suited for
Low Power Data
Retention Mode
Pinout
Military
Commercial
military applications.
PIN ASSIGNMENT
(Top View)
Markings
Q & 883
XT
IT
Timing
25ns
35ns
45ns
55ns
Markings
-25
-35
-45
-55
Markings
Q, Q1, Q2, BQFP
P
L
Markings
(no indicator)
A*
*(available with Q package only)
I/O 0
I/O 1
I/O 2
I/O 3
68 Lead CQFP
(Q, Q1, Q2)
Military SMD
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
Pinout Option
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60  I/O 16
59 I/O 17
58 I/O 18
57 I/O 19
56 I/O 20
55 I/O 21
54 I/O 22
53 I/O 23
52 GND
51 I/O 24
50 I/O 25
49 I/O 26
48 I/O 27
47 I/O 28
46 I/O 29
45 I/O 30
44 I/O 31
I/O17
I/O18
I/O19
Vss
I/O20
I/O21
I/O22
I/O23
Vcc
I/O24
I/O25
I/O26
I/O27
Vss
I/O28
I/O29
I/O30
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60 I/O 14
59 I/O 13
58 I/O 12
57 Vss
56
55
I/O 11
I/O 10
68 Lead CQFP
54
53
52
I/O 9
I/O 8
Vcc
Commercial
Pinout Option
51
50
I/O 7
I/O 6
(Q with
49
48
I/O 5
I/O 4
Pinout A)
47 Vss
46 I/O 3
45 I/O 2
44 I/O 1
68 Lead
CQFP
(BQFP)
Military SMD
Pinout Option
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
60  I/O 16
59 I/O 17
58 I/O 18
57 I/O 19
56 I/O 20
55 I/O 21
54 I/O 22
53 I/O 23
52 GND
51 I/O 24
50 I/O 25
49 I/O 26
48 I/O 27
47 I/O 28
46 I/O 29
45 I/O 30
44 I/O 31
66 Lead
PGA (P)
Military SMD
Pinout
Micross Components reserves the right to change products or specifications without notice.
1




AS8S512K32A pdf, 반도체, 판매, 대치품
AS8S512K32
Austin Semiconductor, Inc. & AS8S512K32A
CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1
SYMBOL
PARAMETER
CADD
A0 - A18 Capacitance
COE OE\ Capacitance
CWE, CCS
WE\ and CS\ Capacitance
CCAIOPACITANCE (VII/NO=0-0IV/O, f3=1 C1aMpaHczita, nTcAe= 25oC)1
CWE ("SAY"MveBrOsioLn) WE\ CapacitPaAncReAMETER
CADD
A0 - A18 Capacitance
N1.OCCTTOWhEEiEs:,
CpaCrSameter
is
OE\
sampWleEd\.
Capacitance
and CS\ Capacitance
CIO I/O 0- I/O 31 Capacitance
CWE ("A" version) WE\ Capacitance
NOTE:
1. This parameter is sampled.
SRAM
MAX
50
&
AAS8SS8U5SNp1IF5T2S1K2K323A2
50 pF
20 pF
20 pF
M5A0X
UNpITFS
50 pF
50 pF
20 pF
20 pF
50 pF
AC TEST CONDITIONS
Test Specifications
Input pulse levels.........................................VSS to 3V
Input rise and fall times.........................................5ns
IOnuptuptu ttimreifAnegrCe rnecTfeeErleeSnvceTels l.eC..v..eO..l.s.N........D......I....T......I...O........N.......S....................11..55VV
Output load..............................................See Figure 1
Test Specifications
Input pulse levels.........................................VSS to 3V
Input rise and fall times.........................................5ns
Input timing reference levels...............................1.5V
Output reference levels........................................1.5V
Output load..............................................See Figure 1
Current Source
Device
Under
Test
Ceff = 50pf
+
-
Current Source
IOL
+
IOH
Vz = 1.5V
(Bipolar
Supply)
NOTES:
Vz is programmable from -2V to + 7V.
IOL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
NOTES:
Vz is programmable from -2V to + 7V.
ARSev8.SIV65O.10zL26Kai/s3n025dt&yIpAOSiHc8Sap5lr1loy2Kgt3rh2aAemmmidabploeinfrtoomf V0OtHoa1n6dmVAOL..
4
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
Figure 1
Figure 1
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
4

4페이지










AS8S512K32A 전자부품, 판매, 대치품
AS8SS51R2AK3M2
& AS8S512K32A
ADDRESS
CS\
WE\
DATA I/O
WRITE CYCLE NO. 1
(Chip Select Controlled)
tWC
tAW tCW
tAH
tAS tWP11
tHZWE
tDS ttDLHZWE
DATA VALID
ADDRESS
CS\
WE\
DATA I/O
WRITE CYCLE NO. 2
(Write Enable Controlled)
tWC
tAS
tAW
tCW
tAH
tWP21
tDS tDH
DATA VALID
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
Micross Components reserves the right to change products or specifications without notice.
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
AS8S512K32

512K x 32 SRAM SRAM MEMORY ARRAY

Austin Semiconductor
Austin Semiconductor
AS8S512K32

512K x 32 SRAM

Micross
Micross

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