PDF AS8SF384K32 Data sheet ( Hoja de datos )

Número de pieza	AS8SF384K32
Descripción	128K x 16 SRAM & 512K x 16 FLASH
Fabricantes	Micross
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No Preview Available ! 128K x 16 SRAM & 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY FEATURES • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH • Built in decoupling caps and multiple ground pins for low noise • Organized as 128K x 16 SRAM and 512K x 16 FLASH • Low power CMOS • TTL Compatible Inputs and Outputs • Both blocks of memory are user conﬁgurable as 256K x 8 FLASH MEMORY FEATURES • Operation with single 5V (±10%) • Eight equal sectors of 64K bytes • Any combination of sectors can be concurrently erased • Supports full chip erase • Embedded erase and program algorithms • 20,000 program/erase cycles • Hardware write protection OPTIONS MARKINGS • Operating Temperature Ranges Military (-55oC to +125oC) XT Industrial (-40oC to +85oC) IT • Timing SRAM 35ns FLASH 90ns -35 • Package Ceramic Quad Flatpack QT SRAM & FLASH Mixed Module AS8SF384K32 PIN ASSIGNMENT (Top View) 68 Lead CQFP (QT) SSSSSSSSIIIIIIII////////OOOOOOOO01234567 GND SSSSSSSSIIIIIIII////////OOOOOOOO89111111102345 FI/O0 FI/O1 FI/O2 FI/O3 FI/O4 FI/O5 FI/O 6 FI/O7 GND FI/O8 FI/O9 FI/O10 FI/O11 FI/O12 FI/O13 FI/O 14 FI/O15 PIN DESCRIPTION PIN A 0-18 SI/O 0-15 FI/O 0-15 OE\ SWE\ 1-2 FWE\ 1-2 SCS\ 1-2 FCS\ 1-2 VCC GND NC FUNCTION Address Inputs SRAM Data Input / Outputs FLASH Data Input / Outputs Output Enable SRAM Write Enables FLASH Write Enables SRAM Chip Selects FLASH Chip Selects Power Supply Ground No Connect GENERAL DESCRIPTION The AS8SF384K32 is a 2 MEG CMOS SRAM and 8 MEG CMOS FLASH Module organized as 128K x 16 (SRAM) and 512K x 16 (FLASH). These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. For more detailed information regarding the FLASH internal operations, programming, command deﬁnitions and functional descrip- tions, please see the AS8F512K32 data sheet located on our website at www.austinsemiconductor.com AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or speciﬁcations without notice. 1 1 page SRAM & FLASH Mixed Module AS8SF384K32 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%) SRAM AC DESCRIPTION READ CYCLE READ cycle time Address access time Chip select access time Output hold from address change Output enable to output valid Chip select to output in low Z1 Output enable to output in low Z1 Chip disable to output in high Z1 Output disable to output in high Z 1 SYMBOL -35 MIN MAX UNITS tRC tAA tACS tOH tAOE tLZCS tLZOE tHZCS tHZOE 35 35 35 2 20 3 0 20 20 ns ns ns ns ns ns ns ns ns SRAM AC (SWE\ & SCS\ controlled) DESCRIPTION WRITE CYCLE WRITE cycle time Chip select to end of write Address valid to end of write Address setup time Address hold from end of write Data valid to end of write Data hold time WRITE pulse width Output active from end of write 1 Write enable to output in High-Z 1 1. This parameter is guaranteed but not tested. SYMBOL -35 MIN MAX UNITS tWC tCW tAW tAS tAH tDS tDH tWP1 tLZWE tHZWE 35 25 25 0 0 20 0 25 2 20 ns ns ns ns ns ns ns ns ns ns AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or speciﬁcations without notice. 5 5 Page SRAM & FLASH Mixed Module AS8SF384K32 Addresses FCS\ OE\ FWE\ FI/O0 - FI/O7 or FI/O8 - FI/ Vcc Chip/Sector Erase Operation Timings tWC 2AAh tAS SA 555h for Chip Erase tAH tGH- tCH VA VA tWP tCS tDS tWPH tDH 55h 30th 10 for Chip Erase tWHWH2 In Prog- ress Complete NOTE: SA= Sector Address. VA = Valid Address for reading status data. AS8SF384K32 Rev. 1.3 01/10 11 Micross Components reserves the right to change products or speciﬁcations without notice. 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
AS8SF384K32	128K x 16 SRAM & 512K x 16 FLASH	Micross
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