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PDF BC847BV Data sheet ( Hoja de datos )
| Número de pieza | BC847BV | |
| Descripción | NPN general purpose double transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC847BV
NPN general purpose double
transistor
Product data sheet
2001 Sep 10
1 page  
NXP Semiconductors
NPN general purpose double transistor
Product data sheet
BC847BV
Graphical information BC847BV
600
handbook, halfpage
hFE
500
(1)
MHB971
400
(2)
300
200
(3)
100
010−1
1
10 102 103
IC (mA)
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3 DC current gain; typical values.
1200
handbVoBokE, halfpage
(mV)
1000
MHB972
800 (1)
600 (2)
400
(3)
200
010−2
10−1
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
1
10 102 103
IC (mA)
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
104
handbook, halfpage
VCEsat
(mV)
103
MHB973
102
1100−1
(1)
(2)
(3)
1 10
102 103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.5 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
haVndBbEosoak,thalfpage
(mV)
1000
800
600
400
(1)
(2)
(3)
MHB974
200
0
10−1
1
10 102 103
IC (mA)
IC/IB 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.6 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Sep 10
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BC847BV.PDF ] | |
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