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PDF BC848S Data sheet ( Hoja de datos )
| Número de pieza | BC848S | |
| Descripción | DUAL TRANSISTOR | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC848S (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC848S DUAL TRANSISTOR (NPN+NPN)
APPLICATION
This device is designed for general purpose amplifier applications
SOT-363
Marking : 2C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
6
IC Collector Current-Continuous
100
PD Power Dissipation
200
RθJA Thermal Resistance from Junction to Ambient
625
Tj Junction Temperature
150
Tstg Storage Temperature Range
-55~+150
Units
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=10µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10µA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
Collector cut-off current
ICEO
VCE=30V,IE=0
Emitter cut-off current
IEBO VEB =5V,IC=0
DC current gain*
hFE*
VCE=5V,IC=2mA
Collector-emitter saturation voltage
VCE(sat)(1)*
VCE(sat)(2)*
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
Base-emitter voltage
VBE(sat)*
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
Base-emitter voltage
VBE(on) *
VCE=5V,IC=2mA
VCE=5V,IC=10mA
Transition frequency
fT VCE=5V,IC=10mA ,f=100MHz
Collector output capacitance
Cob
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
VCB=10V,IE=0,f=1MHz
Min Typ Max Unit
30 V
30 V
6V
100 nA
100 nA
100 nA
420 800
0.25 V
0.6 V
0.7 V
0.9 V
0.58 0.7 V
0.77 V
100 MHz
4.5 pF
www.cj-elec.com
1
B,Mar,2016
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC848S.PDF ] | |
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