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PDF BC857S Data sheet ( Hoja de datos )

Número de pieza BC857S
Descripción DUAL TRANSISTOR
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No Preview Available ! BC857S Hoja de datos, Descripción, Manual

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T SOT-363 Plastic-Encapsulate Transistors
BC857S DUAL TRANSISTOR (PNP+PNP)
FEATURES
z Two transistors in one package
z Reduces number of components and board space
z No mutual interference between the transistors
MARKING: 3C
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tssttgg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.2
0.3
417
150
-55-150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol Test conditions
V(BR)CBO Ic=-10µA,IE=0
V(BR)CEO Ic=-10mA,IB=0
V(BR)EBO IE=-10µA,IC=0
ICBO
VCB=-30V,IE=0
hFE VCE=-5V,IC=-2mA
VCE(sat)(1) IC=-10mA,IB=-0.5mA
VCE(sat)(2) IC=-100mA,IB=-5mA
VBE(1) VCE=-5V,IC=-2mA
VBE(2) VCE=-5V,IC=-10mA
fT VCE=-5V,IC=-10mA,f=100MHz
Cob VCB=-10V,IE=0,f=1MHz
NF VCE=-5V,Ic=-0.2mA,
f=1kHZ,Rs=2KΩ,BW=200Hz
SOT-363
Min Typ Max Unit
-50 V
-45 V
-5 V
-15 nA
125 630
-0.3 V
-0.65
V
-0.6
-0.75
V
-0.82
V
200 MHz
3.5 pF
2.5 dB
www.cj-elec.com
1
E,Mar,2016

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