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PDF MYXDB0650-10CEN Data sheet ( Hoja de datos )
| Número de pieza | MYXDB0650-10CEN | |
| Descripción | SiC Schottky Diode Rectifier Bridge | |
| Fabricantes | Micross | |
| Logotipo |  |
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SiC Schottky Diode Rectifier Bridge
650 Volt 10 Amp Hermetic
MYXDB0650-10CEN
Product OaverrvyiewFeatures
• High voltage 650V isolation
• High current 10A
in• High temperature 210°C
• BeO free and RoHS compliant
• HMP solder tinned leads available
relim• Electrically isolated flange
• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
• No reverse recovery time
P• Screening options available
Benefits
• Essentially no switching losses
• Higher efficiency
• Reduction of heat sink requirements
Applications
• Harsh environment rectification
• Harsh environment regulators
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Absolute Maximum Ratings* (Per single diode)
Symbols
VR
VRRM
IF(AVG)
IFRM
IFSM
PD
TJ
Tstg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
Surge Peak Forward Current (Tp=10µs, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-258 5 PIN
Case
NC
Pin 1 Pin 2 Pin 3 Pin 4 Pin 5
- ~ NC ~ +
Figure 2: Circuit Diagram
Values
650
650
10
60
100
29
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
oC
oC
Thermal Properties
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Values
1.6
Units
oC / Watt
March 2014 Rev 1.0
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MYXDB0650-10CEN.PDF ] | |
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