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PDF MYXDS0600-03DA0 Data sheet ( Hoja de datos )
| Número de pieza | MYXDS0600-03DA0 | |
| Descripción | Silicon Carbide Schottky Diode | |
| Fabricantes | Micross | |
| Logotipo |  |
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Silicon Carbide Schottky Diode
600 Volt 3 Amp Hermetic SMD
MYXDS0600-03DA0
Product OverviewFeatures
ar y• High voltage 600V isolation in a small package outline
• High current 3A
• High temperature 210°C
• BeO free and RoHS compliant
in• HMP solder tinned leads available
• Electrically isolated flange
relim• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
• No reverse recovery time
• Screening options available
Pºº Commercial high temperature
Benefits
• Essentially no switching losses
• Higher efficiency
• High reliability
Applications
• Harsh environment motor drive
• Harsh environment regulators
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Surface mount
• Other packaging options available
Absolute Maximum Ratings
Symbols
VR
VRRM
IF(AVG)
IFRM
IFSM
PD
TJ
Tstg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
Surge Peak Forward Current (Tp=10ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: SMD 0.5
Pad 1
Pad 3
Pad 2
Figure 2: Circuit Diagram
Values
600
600
3
22
31.9
12
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
oC
oC
Thermal Properties
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Values
15.4
Units
oC / Watt
March 2014 Rev 1.0
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MYXDS0600-03DA0.PDF ] | |
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