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PL610-01 데이터시트 PDF




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PL610-01 데이터시트, 핀배열, 회로
PL610-01/-02/-03
1.8V to 3.3V Single IC XO
with Frequency Tuning (10 MHz to 130 MHz)
Features
• Single Die, Wide Frequency Coverage,
Programmable Advanced Oscillator Design
• Single IC to Cover up to 130 MHz Output
Frequency.
• Direct Oscillation Operation with Optional
Programmable Features:
- ±50 ppm Frequency Tuning
- Output Drive Setting (4 mA, 8 mA, or 16 mA)
- 6-Bit Odd/Even Output Divider (÷63)
• Fundamental Crystal Input Frequency:
- 10 MHz to 60 MHz (Default)
- 60 MHz to 130 MHz (Programming Option)
• Output Frequency: LVCMOS
- 80 kHz to 130 MHz
• Wire Bond and Flip Chip Options to Choose from
• Very Low Jitter and Phase Noise
• Low Current Consumption
• Single 1.8V, 2.5V, or 3.3V ±10% Power Supply
• Operating Temperature Range from –40°C to
+85°C
General Description
The PL610 is a high performance general purpose
clock that uses a single die to cover outputs up to
130 MHz, eliminating the need for multiple ICs to cover
a wide frequency range. Designed to fit in a small
2.0 mm x 1.6 mm, or larger substrates, the PL610
offers the best phase noise and jitter performance,
smallest die size, and lowest power consumption of
any comparable IC.
The optional ‘frequency fine tuning’ feature of PL610
allows for frequency adjustment after encapsulation of
the module, up to ±50 ppm. In addition, there is a ‘6’ bit
optional programmable Odd/Even divider (default =
÷1), and three programmable output drive strengths
(4 mA, 8 mA (default), 16 mA) to choose from. The full
feature set of PL610 makes it the most versatile XO for
any application.
Block Diagram
PL610-01/-02/-03
FIN XTAL
XOUT
OSC
Programmable
CLOAD
FREF
(PDB)
Programmable Function
P-Counter
(6-bit)
/1,2
2016 Microchip Technology Inc.
CLK0
OE, PDB, CLK1
DS20005616A-page 1




PL610-01 pdf, 반도체, 판매, 대치품
PL610-01/-02/-03
TABLE 1-2: DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Parameters
Sym. Min. Typ. Max. Units
Output Current, Low Drive
(See Figure 3-2)
Output Current, Standard Drive
(See Figure 3-2)
Output Current, High Drive
(See Figure 3-2)
IOLD ±4 —
IOSD ±8 —
IOHD ±16 —
— mA
— mA
— mA
TABLE 1-3: CRYSTAL SPECIFICATIONS (10 MHZ TO 60 MHZ)
Parameters
Fundamental Crystal Resonator
Frequency
Crystal Loading Rating
(The IC can be programmed for any
value in this range.)
Maximum Sustainable Drive Level
Operating Drive Level
Crystal Shunt Capacitance
Effective Series Resistance,
Fundamental, (See Figure 3-4)
Sym.
FXIN
CL(XTAL)
C0
ESR
Min.
10
8
Typ.
25
Max.
60
Units
MHz
12 pF
100 µW
— µW
3 pF
50
TABLE 1-4: CRYSTAL SPECIFICATIONS (60 MHZ TO 130 MHZ)
Parameters
Fundamental Crystal Resonator
Frequency
Crystal Loading Rating
(The IC can be programmed for any
value in this range.)
Maximum Sustainable Drive Level
Operating Drive Level
Crystal Shunt Capacitance
Effective Series Resistance,
Fundamental, (See Figure 3-4)
Sym.
FXIN
CL(XTAL)
C0
ESR
Min.
60
5
Typ.
25
Max.
130
Units
MHz
8 pF
100 µW
— µW
2.5 pF
30
Conditions
VOL = 0.4V, VOH = 2.4V
VOL = 0.4V, VOH = 2.4V
VOL = 0.4V, VOH = 2.4V
Conditions
Conditions
TABLE 1-5:
Parameters
Phase noise
relative to
carrier (typ.)
PHASE NOISE SPECIFICATIONS (SEE MTC-3)
Freq. @1 Hz @10 Hz @100 Hz @1 kHz @10 kHz @100 kHz
40 MHz –67
–98
–127
–142
–151
–155
26 MHz –65
–96
–124
–145
–150
–155
@1 MHz
–155
–155
Units
dBc/Hz
DS20005616A-page 4
2016 Microchip Technology Inc.

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PL610-01 전자부품, 판매, 대치품
PL610-01/-02/-03
2.0 PAD DESCRIPTIONS
The descriptions of the pads are listed in Table 2-2.
Pad Configurations
PL610-01
0.60
(650μmx600μm)
XIN 1
6 XOUT
OE^, PDB^,
CLK1
2 PL610-01 5
(Wire Bond)
VDD
GND 3
4 CLK0
X
Y
Note: ^ denotes internal pull up
XOUT
PL610-02
0.60
(650μmx600μm)
1 6 XIN
VDD
2 PL610-02 5
(Flip Chip)
OE^, PDB^,
CLK1
CLK0 3
4 GND
X
Y
Note: ^ denotes internal pull up
XIN
PL610-03
0.60
(650μmx600μm)
1 6 XOUT
GND
2 PL610-03 5
OE^, PDB^,
CLK1
CLK0 3
4 VDD
X
Y
Note: ^ denotes internal pull up
TABLE 2-1: DIE SPECIFICATION
Chip Size
0.65 mm x 0.60 mm
Chip Thickness
Optional
Pad Size
90 µm
TABLE 2-2: PAD FUNCTION TABLE
Pad Number
Pad Center
XY
1
–177
231
2
–215
41
3
–215
–186
4 215 –186
5 215 41
6 177 213
Pad Name
PL610-01
XIN
OE, PDB, CLK1
GND
CLK0
VDD
XOUT
Pad Name
PL610-02
XOUT
VDD
CLK0
GND
OE, PDB, CLK1
XIN
Chip Base
GND Level
Pad Name
PL610-03
XIN
GND
CLK0
VDD
OE, PDB, CLK1
XOUT
2016 Microchip Technology Inc.
DS20005616A-page 7

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