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PDF SiHB30N60E Data sheet ( Hoja de datos )
| Número de pieza | SiHB30N60E | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiHB30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
130
15
39
Single
0.125
D2PAK (TO-263)
D
GD
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• Low Figure-of-Merit (FOM) Ron x Qg
• Low Input Capacitance (Ciss)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions please
www.vishay.com/doc?99912
see
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
- LED Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• Renewable Energy
- Solar (PV Inverters)
D2PAK (TO-263)
SiHB30N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 20
30
29
18
65
2
690
250
- 55 to + 150
37
18
300c
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S12-3103-Rev. E, 24-Dec-12
1
Document Number: 91453
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 12 - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 13 - Switching Time Waveforms
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Fig. 14 - Unclamped Inductive Test Circuit
SiHB30N60E
Vishay Siliconix
VDS
VDS
tp
VDD
IAS
Fig. 15 - Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
S12-3103-Rev. E, 24-Dec-12
5
Document Number: 91453
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SiHB30N60E.PDF ] | |
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