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PDF SiHG32N50D Data sheet ( Hoja de datos )
| Número de pieza | SiHG32N50D | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiHG32N50D
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
550
VGS = 10 V
96
18
29
Single
0.150
TO-247AC
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-Of-Merit (FOM): Ron x Qg
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding, Induction Heating, Motor Drives
• Battery Chargers
TO-247AC
SiHG32N50D-E3
SiHG32N50D-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 14 A.
c. 1.6 mm from case.
d. ISD ID, starting TJ = 25 °C.
LIMIT
500
± 30
30
30
19
89
3.1
225
390
- 55 to + 150
24
0.37
300c
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S12-1458-Rev. A, 18-Jun-12
1
Document Number: 91515
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
+- VDD
Fig. 12 - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 13 - Switching Time Waveforms
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 14 - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 15 - Unclamped Inductive Waveforms
SiHG32N50D
Vishay Siliconix
10 V
QGS
VG
QG
QGD
Charge
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 μF
0.3 μF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
S12-1458-Rev. A, 18-Jun-12
5
Document Number: 91515
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHG32N50D.PDF ] | |
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