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PDF SQM120N10-3m8 Data sheet ( Hoja de datos )
| Número de pieza | SQM120N10-3m8 | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SQM120N10-3m8
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
TO-263
100
0.0038
120
Single
D
FEATURES
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
G DS
Top View
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
TO-263
SQM120N10-3m8-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
100
± 20
120
120
120
480
73
266
375
125
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S13-1433-Rev. A, 01-Jul-13
1
Document Number: 63404
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
SQM120N10-3m8
Vishay Siliconix
100 IDM Limited
10 ID Limited
1 Limited by RDS(on)*
100 μs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
0.1 TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
S13-1433-Rev. A, 01-Jul-13
5
Document Number: 63404
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQM120N10-3m8.PDF ] | |
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