DataSheet.es    


PDF R6004ENX Data sheet ( Hoja de datos )

Número de pieza R6004ENX
Descripción Nch 600V 4A Power MOSFET
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de R6004ENX (archivo pdf) en la parte inferior de esta página.


Total 13 Páginas

No Preview Available ! R6004ENX Hoja de datos, Descripción, Manual

R6004ENX
Nch 600V 4A Power MOSFET
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
lFeatures
1) Low on-resistance.
600V
980mW
4A
40W
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R6004ENX
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *3
IAR
PD
Tj
Tstg
dv/dt *4
600
4.0
2.2
8.0
20
46
0.13
0.8
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.03 - Rev.B

1 page




R6004ENX pdf
R6004ENX
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = (t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01 0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
1 10 100 1000
Pulse Width : PW [s]
Fig.3 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/12
2014.03 - Rev.B

5 Page





R6004ENX arduino
R6004ENX
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Data Sheet
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/12
2014.03 - Rev.B

11 Page







PáginasTotal 13 Páginas
PDF Descargar[ Datasheet R6004ENX.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
R6004ENDNch 600V 4A Power MOSFETROHM Semiconductor
ROHM Semiconductor
R6004ENXNch 600V 4A Power MOSFETROHM Semiconductor
ROHM Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar