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부품번호 | FDMS8026S 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FDMS8026S
N-Channel PowerTrench® SyncFETTM
30 V, 22 A, 4.3 mΩ
October 2014
Features
General Description
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A
Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
Advanced package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
The FDMS8026S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top Bottom
Pin 1
S D5
S
S
G
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
22
80
19
100
33
41
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.0
50
°C/W
Device Marking
FDMS8026S
Device
FDMS8026S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS8026S Rev.C2
1
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 19 A
8
VDD = 15 V
6
VDD = 10 V
VDD = 20 V
4
2
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
3000
1000
Ciss
Coss
Crss
100
f = 1 MHz
VGS = 0 V
40
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
Figure8. CapacitancevsDrain
to Source Voltage
40
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01 0.1
1
tAV, TIME IN AVALANCHE (ms)
10 40
Figure9. UnclampedInductive
Switching Capability
200
100
100 μs
10 1 ms
1 THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.1 1
10 ms
100 ms
1s
10 s
DC
10 100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
100
80
VGS = 10 V
60
VGS = 4.5 V
40
20
Limited by Package
0
25 50 75
RθJC = 3.0 oC/W
100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
2000
1000
100
10
SINGLE PULSE
RθJA = 125 oC/W
1 TA = 25 oC
0.5
10-4 10-3 10-2
10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDMS8026S Rev.C2
4
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDMS8026S | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |