|
|
|
부품번호 | FDT3N40 기능 |
|
|
기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
FDT3N40
N-Channel UniFETTM MOSFET
400 V, 2.0 A, 3.4
Features
• RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A
• Low Gate Charge (Typ. 4.5 nC)
• Low Crss (Typ. 3.7 pF)
• 100% Avalanche Tested
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
April 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
S
G SOT-223
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25C)
- Derate above 25C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJA *
Thermal Resistance, Case-to-Sink Typ.
* Surface Mounted on JESD51-3 Board, T<0.1sec.
FDT3N40
400
2.0 *
1.2 *
8.0 *
30
46
2
0.2
4.5
2
0.02
-55 to +150
300
FDT3N40
60
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
©2009 Fairchild Semiconductor Corporation
FDT3N40 Rev. C0
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0 V
2. ID = 250A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10 V
2. ID = 1 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
101
is Limited by R
DS(on)
100
10 s
100 s
1 ms
10 ms
100 ms
10-1
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
DC
101 102
V , Drain-Source Voltage [V]
DS
2.5
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125
T , Case Temperature [oC]
C
Figure 11. Transient Thermal Response Curve
150
102
D =0.5
101 0.2
0.1
0.05
0.02
100 0.01
PDM
t1
t2
1 0 -1
1 0 -2
1 0 -5
single pulse
* N otes :
1. Z (t) = 60 oC /W M ax.
JA
2. D uty Factor, D =t /t
12
3. T - T = P * Z (t)
JM C
DM JC
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
t , S quare W ave P ulse D uration [sec]
1
103
©2009 Fairchild Semiconductor Corporation
FDT3N40 Rev. C0
4
www.fairchildsemi.com
4페이지 Mechanical Dimensions
SOT-223
©2009 Fairchild Semiconductor Corporation
FDT3N40 Rev. C0
7
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ FDT3N40.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDT3N40 | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |