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PDF FDMS7682 Data sheet ( Hoja de datos )
| Número de pieza | FDMS7682 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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January 2015
FDMS7682
N-Channel PowerTrench® MOSFET
30 V, 6.3 mΩ
Features
Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A
Max rDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 11 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( tTransient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
30
33
±20
22
59
16
80
29
33
2.5
-55 to +150
Units
V
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.7
50
°C/W
Device Marking
FDMS7682
Device
FDMS7682
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS7682 Rev.C3
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
FDMS7682 Rev.C3
5 www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDMS7682.PDF ] | |
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