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부품번호 | FDMS015N04B 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
FDMS015N04B
N-Channel PowerTrench® MOSFET
40 V, 100 A, 1.5 mΩ
November 2013
Features
• RDS(on) = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
•
Advanced Package
and High Efficiency
and
Silicon
Combination
for
Low
RDS(on)
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
Top Bottom
Pin 1
SS
S
G
D
DDD
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TA = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
(TA = 25oC)
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1a)
(Note 2)
(Note 3)
(Note 1a)
FDMS015N04B
40
±20
100
31.3
400
526
104
2.5
-55 to +150
Unit
V
V
A
A
mJ
W
W
oC
(Note 1a)
FDMS015N04B
1.2
50
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDMS015N04B Rev. C3
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.12
1.08
1.04
1.00
0.96
0.92
-80
*Notes:
1. VGS = 0V
2. ID = 250μA
-40
TJ,
0
Junction
40 80
Temperature
[oC1]20
160
Figure 9. Maximum Safe Operating Area
1000
100
10
1
Operation in This Area
is Limited by R DS(on)
1ms
10ms
100ms
DC
*Notes:
0.1 1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage [V]
100
Figure 11. Eoss vs. Drain to Source Voltage
2.0
1.5
1.0
Figure 8. On-Resistance Variation
vs. Temperature
1.7
1.6
1.4
1.2
1.0
0.8
0.6
-80
*Notes:
1. VGS = 10V
2. ID = 50A
-40 0
40 80 120
TJ, Junction Temperature [oC]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
120
VGS= 10V
80
40
RθJC= 1.2oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
Figure 12. Unclamped Inductive
Switching Capability
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
10 STARTING TJ = 25oC
0.5 STARTING TJ = 125oC
0
0 10 20 30 40
VDS, Drain to Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FDMS015N04B Rev. C3
4
1
0.1 1 10 100 1000
tAV, Time In Avalanche [ms]
www.fairchildsemi.com
4페이지 Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2012 Fairchild Semiconductor Corporation
FDMS015N04B Rev. C3
7
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDMS015N04B | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |